1) thermally induced microdefect
热致微缺陷
1.
After low-high temperature(800 ℃/4～16 h+1 100 ℃/16 h) two-step annealing,it is found that the density of thermally induced microdefects as well as BMDs(bulk micro defects) in heavily boron doped wafers is much higher than that in conventional wafers.
研究了重掺B对300 mm直拉Si衬底中热致微缺陷的影响。
3) hydrogen-induced platelet
氢致缺陷
5) microdefect
微观缺陷
1.
Microdefects in binary TiAl alloys with different chemical compositions investigated by positron annihilation technique;
用正电子湮没技术研究不同化学成分的二元TiAl合金中的微观缺陷
2.
Effects of Zr on the Microdefects and Electronic State in Ni-Al Intermetallic Compounds;
Zr对Ni-Al系金属间化合物中微观缺陷和电子状态的影响
3.
Study of species characteristic and formation of microdefects in thermite welded joints in rails was described.
通过扫描电镜观察铝热焊接钢轨焊缝拉伸和冲击断口的断口形貌及能谱对缺陷进行成分分析,研究了使用中合格的铝热焊缝的微观缺陷的种类和形成机制。
6) microdefects
微观缺陷
1.
Microdefects in nanocrystalline carbon;
纳米碳中的微观缺陷结构特征
2.
Change in Microdefects and Electron Density of Cuprate Superconductor with Temperatures;
高温超导体的微观缺陷和电子密度随温度的变化
3.
Positron annihilation of microdefects and 3d electrons in Zn-40Al alloy
Zn-40Al合金中微观缺陷和3d电子的正电子湮没
补充资料：点缺陷(见晶体缺陷)
点缺陷(见晶体缺陷)
point defect
点缺陷point defeet见晶体缺陷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条