1) Sulfuric Acid-Potassium Permanganate System
H2SO4-KMnO4体系
2) Fe-H2SO4 system
Fe-H2SO4体系
3) H_2O_2-H_2SO_4 system
H2O2-H2SO4体系
4) System of H2SO4
H2SO4体系
5) chlorine dioxide-iodide-sulphuric acid system
ClO2-I-H2SO4体系
6) HCl-H2SO4 etchant solutions
HCl-H2SO4腐蚀体系
1.
The effects of etching conditions in HCl-H2SO4 etchant solutions was investigated, including the concentration ratio of H2SO4 and HCl, the concentration of Al3+, the temperature and current density on the limiting length and thickness of a non-piercing layer of pits within Al foil for high voltage applications.
研究了高压阳极铝箔在HCl-H2SO4腐蚀体系中,H2SO4/HCl浓度比、Al3+浓度、温度和电流密度对隧道孔长度和铝箔芯层厚度的影响规律。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条