1) LPPCVD
低压等离子体增强化学气相沉积法
1.
α-C∶H thin films were deposited by low-pressure plasma chemical vapor deposition(LPPCVD)with H2(99.
9999%的H2及反式-2-丁烯(T2B)为工作气体,利用低压等离子体增强化学气相沉积法制备了α-C∶H薄膜。
2) Low Temperature plasma enhance chemical vapour deposition
低温等离子增强化学气相沉积
3) direct current-radio frequency plasma enhan- ced chemical vapor deposition
偏压/射频耦合等离子体增强化学气相沉积
4) very-high-frequency plasma-enhanced chemical vapor deposition
超高频等离子体增强化学气相沉积
1.
Deposition of μc-Si:H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper.
采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术,实现了微晶硅硅薄膜的高速沉积,并通过改变气体总流量改变气体滞留时间,考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响。
5) Direct current plasma enhanced chemical vapour deposition
直流等离子体增强化学气相沉积
6) PECVD
等离子体增强化学气相沉积
1.
The Effect of Repeated Ar~+ Bombardment on the Corrosion Resistance of Plasma-enhanced Chemical Vapour Deposited (PECVD) TiN Film;
循环氩离子轰击对等离子体增强化学气相沉积(PECVD)TiN膜耐腐蚀性能的影响
2.
Facet Antireflection Coatings Deposited by PECVD;
等离子体增强化学气相沉积端面减反膜的研究
3.
High Quality ZnO Thin Films Grown by PECVD from Metal Organic Zinc and Carbon Dioxide Mixture Gas Sources;
用锌金属有机源和二氧化碳等离子体增强化学气相沉积的方法制备高质量氧化锌薄膜
补充资料：低压
1.物理学上指较低的压力。 2.较低的电压，通常指二百五十伏特以下的电压。 3.心脏舒张时血液对血管的压力。也叫舒张压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条