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1)  BiCMOS Bandgap Reference
BiCMOS带隙基准
1.
A BiCMOS Bandgap Reference for LDOs
一种用于LDO的BiCMOS带隙基准
2)  Bandgap reference
带隙基准
1.
CMOS bandgap reference voltage source with high PSRR;
一种高电源抑制比的CMOS带隙基准电压源
2.
Design of a low-voltage CMOS bandgap reference circuit based on the body-driven technique;
基于体驱动技术的低压CMOS带隙基准电路设计
3.
A resistorless CMOS bandgap reference with below 1 V output;
输出电压低于1 V的无电阻CMOS带隙基准电压源(英文)
3)  bandgap voltage reference
带隙基准
1.
This paper introduce a high precision bandgap voltage reference with a piecewise-linear-compensating circuit which is an easily extended structure.
将该电路应用于一款Boost升压芯片的带隙基准源中,在-40~120℃的温度区间分三个子区间进行线性补偿,采用JAZZBCD05 2P3M BiCMOS工艺实现,仿真结果表明,在整个温度范围,温漂可达到5。
2.
This paper proposes a novel high precision CMOS bandgap voltage reference which with a soft-start up circuit.
提出了一种新颖的带有软启动的高精密CMOS带隙基准电压源。
3.
A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.
提出了一种采用分段线性补偿的方法来实现高精度带隙基准 ,其基本原理是将整个温度区间分为若干个子区间 ,在不同子区间上采用不同线性补偿函数达到最佳补偿 。
4)  band-gap reference
带隙基准
1.
Based on the analysis of conventional band-gap reference circuitry,the circuit fo- cuses on improving performance of operational amplifier.
为了满足IC设计中对基准电源低功耗、低温度系数、高电源抑制比的要求,设计一种带隙基准电压源电路。
2.
After analysis of the traditional bandgap voltage reference(BGR) circuit,making use of vertical NPN bipolar transistor parasitic model,in this paper we present a novel structure implementation of the band-gap reference which have good temperature coefficient(TC) and high power supply rejection ratio(PSRR),can be used for DAC,ADC,linear regulator and so on.
在分析传统带隙基准电压电路的基础上,本设计利用纵向NPN双极型晶体管的寄生模型提出了一种结构简单新颖、具有良好的温度系数和较高的电源抑制比,可用于数模转换器、模数转换器、线性稳压器和开关稳压器等电路的高精度基准电压源,此外还讨论了基准源的启动问题。
3.
For low voltage and high precision applications,a standard CMOS low voltage band-gap reference circuit is introduced in this paper.
设计了一种标准CMOS工艺下的低电压带隙基准电路,该电路使用了温度的二阶曲率补偿技术,使输出电压达到了较低的温度系数。
5)  bandgap ['bændɡæp]
带隙基准
1.
A bandgap voltage reference based on the conventional architecture is optimized.
在原有经典三条支路结构的带隙基准电路基础上,通过减少带隙电压源的电流源镜像次数及控制电流源漏源电压,在减小器件失配影响的同时,进一步减小了沟道长度调制效应的影响,大幅度提高了基准电压源的精度,降低了温度系数。
2.
5um models, the paper analyzes and designs a novel LDO linear regulator, and it includes the second curvature compensation bandgap voltage reference, error amplifier, over thermal protect, limit current protect.
5um器件模型,分析和设计了一款新颖的LDO线性稳压器,包括二阶曲率补偿带隙基准电压源、误差放大器、过热保护和限流电路。
3.
A sub-1v low voltage bandgap reference using body-driven technique was designed in this paper.
本文设计了一种电源电压低于1v的体输入式带隙基准电路。
6)  bandgap reference
带隙基准源
1.
A Curvature-Corrected CMOS Bandgap Reference;
一种低压低温漂的CMOS带隙基准源
2.
A design of ultra-low-power bandgap reference base on the subthreshold region
一种工作在亚阈区超低功耗带隙基准源的设计
3.
The second-order nonlinear effect of the transistor VBE current varying with temperature in the conventional CMOS bandgap reference was analyzed.
分析了传统CMOS带隙基准源电路中三极管VBE电流随温度变化的二阶非线性效应,提出了一种对PTAT二阶温度进行补偿的方法,并在此基础上设计了一个高精度的带隙基准源电路。
补充资料:[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式:C16H16ClN3O3S
分子量:365.5
CAS号:26807-65-8

性质:暂无

制备方法:暂无

用途:用于轻、中度原发性高血压。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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