2) oxide trapped charge
氧化物陷阱电荷
1.
Gamma-irradiation induced oxide trapped charge and interface charge in Power VDMOS;
Power VDMOS中辐照引起的氧化物陷阱电荷和界面态电荷
3) oxide trap
氧化层陷阱
1.
The position and energy level of the activated oxide trap are determined by measuring the dependence of capture time and emission time on gate bias voltage.
室温下在极细沟道样品中观测到了大幅度 (大于 60 % )的 RTS,通过测量 RTS的俘获时间和发射时间与栅压和温度的依赖关系 ,获得了氧化层陷阱的位置与能级 ,证实了氧化层陷阱的热激活模型在细沟道 n MOSFET中仍然成立。
4) oxide traps
氧化层陷阱
1.
Shift of the flat-band voltage,density of oxide traps and interface states are calculated.
结果表明NH4F表面预处理和高温退火新型工艺可以显著降低界面态和氧化层陷阱电荷,从而降低栅极漏电流。
5) trapped charges
陷阱电荷
1.
The distribution of trapped charges and the relationship between the displacement of movable grating and applied voltage are analyzed in detail An e.
结构中SiO2绝缘层在外加电场作用下产生陷阱电荷,对器件的驱动特性产生影响。
6) charge traps
电荷陷阱
1.
In order to characterize accurately the distribution of charge traps on energy in polymer dielectric materials by using Photon-stimulated Discharge(PSD) Spectra,the raw PSD Spectra need to be normalized by the energy of light excitation.
为了利用光激电流谱准确地表征聚合物电介质材料中的电荷陷阱密度按能量分布的情况,需要将原始光激电流谱对光激发能量进行归一化。
补充资料：钴钼氢氧化物氧化物磷酸盐
CAS：68130-37-0
中文名称：钴钼氢氧化物氧化物磷酸盐
英文名称：Cobalt molybdenum hydroxide oxide phosphate； Molybdenum cobalt acid phosphate complex； Molybdenumcobaltacid phosphate complex
中文名称：钴钼氢氧化物氧化物磷酸盐
英文名称：Cobalt molybdenum hydroxide oxide phosphate； Molybdenum cobalt acid phosphate complex； Molybdenumcobaltacid phosphate complex
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条