说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 句库 -> 离子束刻蚀
1.
The Mechanism Analysis of HgCdTe pn Junction Formed by Ion Beam Milling
离子束刻蚀HgCdTe成结机制分析
2.
study on step sidewall tilt in ion beam etching of Fresnel lens
离子束刻蚀过程中台阶侧壁倾斜现象研究
3.
APPLICATION OF ION BEAM MILLING TECHNIQUE TO JOSEPHSON DEVICE TECHNOLOGY
离子束刻蚀技术在约瑟夫逊器件工艺中的应用
4.
Fabrication of 128×128 Area Silicon Field Emission Arrays Using Ar Ion Beam Etching
128×128元硅场发射阵列的氩离子束刻蚀制作
5.
Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction (PartⅡ)
离子束刻蚀HgCdTe环孔pn结Ⅰ—Ⅴ、R_D—V特性的研究(下)
6.
Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction
离子束刻蚀HgCdTe环孔pn结Ⅰ-Ⅴ、R_D-V特性的研究(上)
7.
Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;
介质膜光栅:光刻胶掩模占宽比和离子束刻蚀槽深的监控
8.
Investigation of Planar and Channel Optical Waveguides Fabricated by Ion Implantation and Ion Beam Etching;
离子注入与离子束刻蚀制备平面和条形光波导的研究
9.
Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping
多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限
10.
Acceptable Error of Etching Depth in Ion Beam Etching Microlens
离子束蚀刻微透镜中蚀刻深度允许误差的研究
11.
Generic specification of ion beam etching system
GB/T15861-1995离子束蚀刻机通用技术条件
12.
plasma sputter combined etching
等离子溅射复合刻蚀
13.
Gas-Assisted Etching of Micro-Hole Lattice Array on Lithium Niobate with Focused Ion Beam
用聚焦离子束气体辅助刻蚀在LiNbO_3上制备亚微米圆孔点阵
14.
NUMERICAL STUDIES ON ETCH PROFILES IN HIGH-DENSITY PLASMA;
高密度等离子体刻蚀轮廓的数值研究
15.
Investigation of Etching SiCOH Films by Dual-Frequency Capacitively Coupled Plasma
SiCOH薄膜的双频等离子体刻蚀研究
16.
Simulations of Plasma Etching Based on Diffusion Limited Erosion Model
基于扩散限制刻蚀模型的等离子体刻蚀模拟研究
17.
Corrosion and Fatigue Properties of Al Alloys Treated by Ion Beams;
离子束处理铝合金的腐蚀和疲劳性能
18.
Investigation on Characteristics of Ablation Plasma Induced by Intense Pulsed Ion Beam;
强脉冲离子束产生的烧蚀等离子体特性的研究