1.
Study of the Growth and Properties of Silicon Carbide Epilayer;
碳化硅外延材料生长及表征技术研究
2.
The MOCVD Growth Research on AlGaN Epitaxial Layer with High-Al Concentration
高Al组分的AlGaN外延材料的MOCVD生长研究
3.
Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement
用PL谱评测多量子阱红外探测器外延材料
4.
Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy Structure
GaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
5.
MBE Growth of InP Based PHEMT Epitaxial Materials;
分子束外延生长InP基赝配高电子迁移率晶体管外延材料
6.
Material Defects and Reliability of GaN-Light Emitting Diode
GaN基LED外延材料缺陷对其器件可靠性的影响
7.
Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.
使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性。
8.
An Easy Method for Judging the Type of Electric Conduction and the Concentration of Charge Carrier in Semiconductor Epitaxial Material
半导体外延材料导电类型及载流子浓度的简易判定法
9.
Study of Material Characterization and Temperature Modeling of Silicon Carbide Epilayer;
碳化硅外延材料生长温度场模拟和表征技术研究
10.
The Ohmic Contacts to GaN HEMT Epilayers and Its Applications to Hall Measurements;
GaN HEMT外延材料的欧姆接触及其在霍尔测试上的应用
11.
X-ray Kinematics and Its Application in Epitaxial Semiconductor Materials;
X射线运动学理论及其在半导体外延材料分析中的应用
12.
The Calculation of Strain Field in Semiconductor Heteroepitaxy Material and Quantum Dot Relax Degree
半导体异质外延材料的应变场及量子点弛豫度的计算
13.
XRD Characterization of GaAs-Based Hetero-Epitaxy Materials and SiC MESFET Structure Materials;
GaAs多层异质外延结构材料和SiC MESFET结构材料的X射线双晶衍射分析
14.
Growth and Characterization of GaN by Hydride Vapor Phase Epitaxy;
氢化物气相外延生长GaN材料及其物性分析
15.
Design of Material Structure and Epitexyial Growth of 1.55μm High Speed LD;
1.55μm高速激光器材料结构设计及外延生长
16.
Investigations of Heteroepitaxy and New Semiconductor Materials for Optoelectronic Integration
光电子集成中的异质外延与新材料研究
17.
A Study of In Situ Annealing of MBE Growth Hg1-_xCd_xTe
分子束外延生长Hg1-_xCd_xTe材料原位退火研究
18.
MBE GROWN ANTIMONIDE MID-INFRARED LASERS AND PHOTODETECTORS
用分子束外延制备红外锑化物激光器和探测器材料