1.
A Theoretical Study of Structure and Aromaticity of CSiGe Tetramer Clusters;
碳硅锗四原子团簇结构和芳香性的理论研究
2.
Ab Initio Study of Carbon-related and Self-interstitial Defects in Si and SiGe Alloy Semiconductors;
硅和硅锗合金半导体中碳相关缺陷和自间隙缺陷的从头计算研究
3.
Thermal Conductivity and Tensile Properties of BN,SiC and Ge Nanotubes
氮化硼,碳化硅和锗纳米管的导热与拉伸力学特性研究
4.
Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;
基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
5.
The Study of Growth of SiGe Thin Films and Electrical Properties by UHVCVD;
UHVCVD生长锗硅薄膜及其电学性能研究
6.
Study of the Low-dimensional Structures on the SiGe Alloys and the Photoluminescence;
硅锗薄膜上低维结构及PL光谱研究
7.
Study of Si-based Ge PIN Infrared Detector with Numerical Simulation
硅基锗PIN红外探测器的数值模拟研究
8.
40-Gb/s Demultiplexer Based on SiGe Process
基于锗硅工艺的40-Gb/s分接器
9.
Research on Relaxation of SiGe/SOI and Fabrication of SSOI Materials;
SOI基锗硅弛豫研究及绝缘体上应变硅材料制备
10.
Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films
非晶硅和非晶硅锗薄膜的金属诱导结晶
11.
pyrolytic carbon silicon carbide mixture
热解碳 碳化硅混合物
12.
Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T1551-1995硅、锗单晶电阻率测定直流两探针法
13.
Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T1552-1995硅、锗单晶电阻率测定直排四探针法
14.
"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."
常用的本质半导体是硅、锗以及砷化镓等的单晶。
15.
The Mechanism of No Phonon Optical Transitions in SiGe Alloy
锗硅合金半导体中无声子参与光跃迁机制研究
16.
The Study of Photics Character and Thermoelectrical Properties of Silicon-Germanium Alloys;
硅锗合金光学性质及热电转换性能的研究
17.
Research in Growth of Poly-Si_(1-x)Ge_x on SiO_2 by UHVCVD;
利用UHV/CVD在SiO_2薄膜上生长多晶锗硅薄膜的研究
18.
Study and Improvement of Silicon Based Germanium Quantum-dot Near Infrared Photodetecter;
硅基锗量子点近红外探测器的研究和改进