1.
Study on Thermal Stability and Tunneling Current of Ultrathin Gate Oxidation;
超薄栅氧化层的热稳定性和隧道电流研究
2.
Process Monitor of Plasma Charging Damage in Ultra-Thin Gate Oxide
超薄栅氧化层等离子体损伤的工艺监测
3.
Study on the Time Dependent Dielectric Breakdown and Reliability Simulation of Ultra-thin Gate Oxides;
超薄栅氧化层经时击穿效应与可靠性仿真技术研究
4.
gate oxide integrity
栅极氧化层的完整性
5.
Novel Structure Trench E-JFET with Adding Oxide Region beneath Gate
栅极下加氧化层的新型沟槽栅E-JFET仿真研究
6.
At the sub 90nm technology node, the gate oxide thickness is expected to be 12-15 Angstrom.
当半导体结点技术发展到小于90纳米时,栅氧化层厚度将减薄至12到15埃。
7.
double poly process
双层多晶硅栅金属氧化物半导体工艺
8.
avalanche injection stacked gate mos
雪崩注入多层栅金属氧化物半导体
9.
Study of the Reliability of the Gate Oxide Related to EEPROM
EEPROM中栅氧化层的可靠性研究
10.
Study on Plasma Process Induced Damage in Gate Oxide of MOSFET;
等离子体工艺引起的MOSFET栅氧化层损伤研究
11.
Influence of Aluminum Oxide Buffer Layer on the Properties of ZnO Thin Film
氧化铝缓冲层对ZnO薄膜性质的影响
12.
Solution-Processed Zinc Oxide Thin Films and Top-Gate Thin Film Transistors
溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件
13.
Preparation of Thin SiO_2 Films from Polysilane Coatings Using Oxygen Plasma Method;
氧等离子体处理聚硅烷涂层制备二氧化硅薄膜
14.
They should remove the field plate and oxide and deposit a thin aluminum film over this region.
他们应当去掉场极板和氧化层，并在整个区域淀积一层薄的铝薄膜。
15.
The mesophyll consists of two layers of palisade parenchyma.
叶肉是由两层栅栏薄壁组织组成。
16.
Vacuum-ultraviolet Blazed Silicon Gratings Anisotropically Wet-etched by a Native-oxide Mask
利用天然氧化层掩模的真空紫外硅闪耀光栅的湿法刻蚀制作
17.
floating gate mos
浮栅金属氧化物半导体
18.
We can classify thin films into four groups:thermal oxides,dielectric layers,polycrystalline silicon, and metal films.
我们可以把薄膜分成四组：热氧化物，介电质层，多晶硅，金属薄膜。