1.
ESVAC (Epitaxial Silicon Variable Capacitance Diode)
外延硅可变电容二极管
2.
gold-epitaxial silicon high-frequency diode
金-外延硅高频二极管
3.
silicon on sapphire technology
蓝宝石上外延硅技术
4.
silicon on sopphire technique
蓝宝石上外延硅工艺
5.
Epitaxial Graphene on SiC
碳化硅表面的外延Graphene
6.
Epitaxial Growth of Cubic Silicon Carbide on Silicon by Sublimation Method;
用升华法在硅衬底上外延生长β碳化硅薄膜
7.
silicon epitaxial highcurrent switching diode
硅外延大电流开关二极管
8.
Study of GaN Epitaxial Growth on Si-based Micro Structures;
硅基微结构上的GaN外延生长研究
9.
Study of the Growth and Properties of Silicon Carbide Epilayer;
碳化硅外延材料生长及表征技术研究
10.
Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;
基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
11.
Fabrication of SOI Material Using Epitaxial Layer Transfer of Porous Silicon and Luminescence Study of Modified Porous Silicon;
多孔硅外延层转移SOI新材料制备与改性多孔硅发光性能的研究
12.
Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
GB/T14142-1993硅外延层晶体完整性检查方法腐蚀法
13.
Theoretical Studies on the Reaction Mechanism of PCl_3 with H_2 in Epitaxy Growth of n-type Silicon;
PCl_3/H_2外延生长N型硅反应机理的理论研究
14.
Theoretical Studies on the Reaction Mechanism of BCl_3 with H_2 in Epitaxy Growth of p-type Silicon;
BCl_3/H_2外延生长P型硅反应机理的理论研究
15.
Improvement of the Uniformity and Consistency of the Resistivity and Thickness of the Silicon Epitaxay Layers;
硅外延生长电阻率与厚度一致性的研究
16.
Reactive Epitaxial Growth of Manganese and Manganese Silicide on Si(100)
锰及其硅化物在Si(100)表面的反应外延生长
17.
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T14847-1993重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
18.
Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.
使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性。