1.
advanced polysilicon self aligned process
改进型自对准多晶硅栅工艺
2.
double poly process
双层多晶硅栅金属氧化物半导体工艺
3.
polysilicon gate ccd
多晶硅栅电荷耦合掐
4.
Physical Metallurgical Method to Produce Solar-grade Silicon;
冶金法制备太阳能级多晶硅工艺研究
5.
Research on Process of Polysilicon Nanofilm Pressure Sensor
多晶硅纳米薄膜压力传感器工艺研究
6.
polycrystalline silicon gate mos
多晶硅栅金属氧化物半导体
7.
The Discussion of the Improved Siemens Process for Polysilicon in Design
改良西门子法生产多晶硅工艺设计探讨
8.
Mechanism and Craft Control Research of Poly-Si Films by Aluminmum-induced Crystallization Amorphous Silicon for Thin-film Solar Cells
太阳能电池多晶硅薄膜铝诱导晶化（AIC）机制及工艺控制研究
9.
floating gate silicon process
浮栅硅金属氧化物半导体工艺
10.
silicon gate mos process
硅栅金属氧化物半导体工艺
11.
Assembly Process of LCOS-Cell
硅基液晶显示器液晶盒贴合工艺研究
12.
silicon insulated gate fet
硅绝缘栅场效应晶体管
13.
Fire Danger of Polycrystalline Silicon Production Artas and Crafts and Fire Security Measures
浅析多晶硅生产工艺火灾危险性及防火安全措施
14.
EFFECT OF TRANSITION-METAL CONTAMINATION ON MINORITY LIFETIME IN CAST MULTI-CRYSTALLINE SILICON UNDER RAPID THERMAL PROCESSING
快速热处理工艺下金属杂质对铸造多晶硅少子寿命的影响
15.
New Process Principle and Research Advances of Production of Solar Grade Poly Silicon by Metallurgical Method
冶金法制备太阳能级多晶硅新工艺原理及研究进展
16.
Fabrication and Characterization of Ni-Based Fully Silicided Metal Gate;
Ni基全硅化物金属栅工艺、特性及表征技术研究
17.
Process Research on PECVD SiN-x:H Film for Crystalline Silicon Solar Cells
晶体硅太阳能电池PECVD SiNx:H薄膜工艺研究
18.
The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes.
用于增强和取代多晶硅的难熔金属和难熔金属硅化物通常是用物理蒸发沉积工艺沉积的。