1.
Study of the Growth and Properties of Silicon Carbide Epilayer;
碳化硅外延材料生长及表征技术研究
2.
Study of Material Characterization and Temperature Modeling of Silicon Carbide Epilayer;
碳化硅外延材料生长温度场模拟和表征技术研究
3.
Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.
使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性。
4.
Fabrication of SOI Material Using Epitaxial Layer Transfer of Porous Silicon and Luminescence Study of Modified Porous Silicon;
多孔硅外延层转移SOI新材料制备与改性多孔硅发光性能的研究
5.
The MOCVD Growth Research on AlGaN Epitaxial Layer with High-Al Concentration
高Al组分的AlGaN外延材料的MOCVD生长研究
6.
Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement
用PL谱评测多量子阱红外探测器外延材料
7.
Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy Structure
GaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
8.
MBE Growth of InP Based PHEMT Epitaxial Materials;
分子束外延生长InP基赝配高电子迁移率晶体管外延材料
9.
Moreover,the mixed material with much silastic is not ben- eficial to S-wave propagation.
此外,硅橡胶量多的混合材料,对横波的传播不利。
10.
Synthesis of Ultraviolet-curable Silicone Materials and Photo-curing Study;
有机硅紫外光固化材料的合成及光固化研究
11.
Survey of Study on Silicon-based Low-dimension Films for Infrared Detector
硅基低维红外探测薄膜材料的研究概况
12.
ESVAC (Epitaxial Silicon Variable Capacitance Diode)
外延硅可变电容二极管
13.
gold-epitaxial silicon high-frequency diode
金-外延硅高频二极管
14.
silicon on sapphire technology
蓝宝石上外延硅技术
15.
silicon on sopphire technique
蓝宝石上外延硅工艺
16.
Epitaxial Graphene on SiC
碳化硅表面的外延Graphene
17.
XRD Characterization of GaAs-Based Hetero-Epitaxy Materials and SiC MESFET Structure Materials;
GaAs多层异质外延结构材料和SiC MESFET结构材料的X射线双晶衍射分析
18.
Growth and Characterization of GaN by Hydride Vapor Phase Epitaxy;
氢化物气相外延生长GaN材料及其物性分析