1)  CVD
CVD
1.
Analysis and Verification of Silicon Nitride Super-micro Powder Synthesis with FBR-CVD Technique;
流态床CVD法制氮化硅超微粉过程分析及实验验证
2.
Preparation of B-C system materials by CVD;
CVD法制备B-C体系材料
3.
EBSD study of CVD-W grain orientation and grain boundary;
CVD-W晶粒取向和晶界结构的EBSD研究
2)  CVD
化学气相沉积
1.
Growth of carbon nanotubes on SiO_2-particle substrates via CVD method;
利用化学气相沉积法在SiO_2小球基底上制备纳米碳管的研究(英文)
2.
Research Status on the Adhesion between Substrate and Diamond Film Deposited by CVD;
化学气相沉积金刚石薄膜刀具膜/基附着性能研究现状
3.
Study on CVD for Tungsten Coating and Capability of its Anti-ablation;
化学气相沉积钨涂层及抗烧蚀性能研究
3)  CVD
化学气相淀积
1.
Development of double-chamber UHV/CVD system;
双生长室超高真空化学气相淀积系统的研制
2.
The applications of CVD in the preparations of ultrafine powders,nanocompositers,and functionally gradient materials were discussed,the processing features of CVD,the properties and the microstructures of the materials thus prepared were analyzed with specific examples.
本文讨论了化学气相淀积在超细粉，纳米复合材料及梯度功能材料制备中的应用，并结合实例分析了化学气相淀积的工艺特性及所制备材料的性能、显微组织特点。
3.
12%,were epitaxially deposited on Si(100) substrates via chemical vapor deposition(CVD) process,using C2H4 and SiH4 as C and Si resources,respectively.
用化学气相淀积方法,以乙烯为碳源、硅烷为硅源,在Si(100)衬底上外延生长了替位式C组分达1。
4)  CVD
化学气相沉积法
1.
Well-aligned open-ended multi-walled carbon nanotube (MWCNT) arrays were prepared via chemical vapor deposition (CVD) method in porous anodic aluminum oxide (AAO) templates without depositing any transition metals as catalyst.
在不加过渡金属做催化剂的前提下,利用化学气相沉积法在二次阳极氧化法制得的多孔氧化铝模板中制备沉积了定取向碳纳米管阵列。
2.
In recent year, the helical carbon fibers are preparation by chemical vapor deposition method(CVD), which commercial acetylene as the carbon source, a nickel as catalyst, a sulfur compound as impurity, reaction temperature at 700～850℃.
近年来螺旋形碳纤维的制备方法主要是化学气相沉积法 (CVD法 )。
3.
In the present work, different shaped carbon nanotubes were produced by the general CVD and the template method at different temperature (600 ℃,700 ℃) with the reaction gas of acetylene.
以乙炔作为反应气 ,用化学气相沉积法 (CVD)和模板法在不同温度 (60 0℃、70 0℃ )下制备了不同形貌的碳纳米管 ,并采用TEM ,HRTEM ,SEM ,XRD ,Raman和充放电实验方法研究其形貌、结构和电化学嵌锂性能 。
5)  CVD
CVD法
1.
Synthesis of Multiwall Carbon Nanotubes by CVD Method;
多壁碳纳米管的CVD法制备
2.
Investigation of a new type nano carbon film prepared by high energy plasma assisted CVD;
高能等离子体辅助CVD法新型纳米碳膜的制备及分析
3.
Computer Simulation for the Preparation of Fe 6 5%Si Sheet by the CVD Method;
CVD法制取Fe-6-5% Si薄板的扩散工艺计算机模拟
6)  CVD
化学气相沉积（CVD）
参考词条
补充资料：CVD
分子式：
CAS号：

性质：利用气相化学反应在基底上沉积另一种固体材料的方法，常用于制取固体薄膜。化学气相沉积过程包括气相反应物的生成、气相反应物的输运和沉积。利用化学气相沉积方法可以得到从非晶态、晶态到外延单晶薄膜等各种材料，是一种应用非常广泛的化学合成方法。化学气相沉积还可以用于制备多种高熔点化合物薄膜。例如，高熔点的四氮化三硅可以利用氨和硅烷反应得到。其他如二氧化硅和氧化铝等薄膜也可以用此法制取。化学气相沉积在半导体材料和器件的制备中具有重要的用途。在半导体器件的制备中常常需要在半导体表面生长一定厚度的另一种电学性能不同的半导体单晶薄膜，这种薄膜可以利用化学气相沉积或化学气相外延的方法制取。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。