1) CdSe nanocrystals
CdSe纳米晶
1.
Electroluminescence of CdSe Nanocrystals Synthesized by Aqueous Solution;
水溶性CdSe纳米晶的电致发光研究
2.
With trioctylphosphine and oleic acid as the ligands of Se and Cd,high-quality CdSe nanocrystals with controlled particle size were synthesized in a 260～300 ℃ noncoordinating solvent octadecene under argon flow.
在氩气保护下,用三辛基亚磷酸和油酸分别作为Se和Cd的配位体,在260~300℃的十八烯溶液中合成了尺寸可控的CdSe纳米晶。
3.
The results of XPS confirmed the formation of CdSe nanocrystals,and the images of TEM demonstrated that the average size of CdSe nanocrystals was less than 10 nm and the aggregation occurred among the nanocrystals.
以巯基乙酸为稳定剂,在水相中制备了CdSe纳米晶水溶胶,并用X射线光电子能谱和透射电子显微镜对其进行了表征,证明了CdSe纳米晶的形成。
2) CdSe nanorods
CdSe纳米棒
1.
Preparation and photoelectrochemical study of CdSe nanorods;
CdSe纳米棒的制备及光电性能研究
2.
Photoelectrochemical properties of ZnO nanocomplex/CdSe nanorods composite film
ZnO纳米团簇与CdSe纳米棒复合膜的光电化学性能研究
3.
CdSe nanorods with different structure phases were prepared by a hydrothermal method, and the products were characterized with TEM, SEM, XRD, TGA-DTA.
采用水热法制备了不同晶型CdSe纳米棒,并用TEM、SEM、XRD、TGA-DTA对其进行了表征。
3) nanocrystal CdSe
纳米CdSe
1.
The absorption behavior of bilirubin on nanocrystal CdSe was investigated in detail using quartz crystal microbalance(QCM).
用石英微天平技术详细研究了胆红素在纳米CdSe晶体表面上的吸附行为。
4) nanocrystalline CdSe
纳晶CdSe
5) CdSe nanoparticles
CdSe纳米粒子
1.
In order to explore the best conditions of CdSe nanoparticles and photoluminescence properties of CdSe nanoparticles and meso-tetra-(4-trimethylaminophenyl) porphyrin cobalt iodide composite film.
为了探索CdSe纳米粒子合成的最佳条件及其与碘化三甲氨基苯基卟啉钴(CoTAPP I)复合膜的光学性能,采用湿化学法合成了CdSe纳米粒子;利用逐层沉积法组装了CdSe-CoTAPP I复合膜。
6) CdSe nanowire array
CdSe纳米线阵列
1.
Highly-ordered CdSe nanowire arrays embedded in anodic alumina membranes (AAM) with nanopore arrays were prepared by template-electrodeposition method in aqueous solution containing SeSO32- and Cd2+ at room temperature.
通过在含有SeSO32-和Cd2+的室温水溶液中,用模板-电沉积法在纳米孔阵列阳极氧化铝膜(AAM)模板中制备了高有序性的CdSe纳米线阵列,并对其形貌、结构和组分进行了表征。
补充资料：cadmium selenide crystal CdSe
分子式：
CAS号：
性质：周期表第Ⅱ、Ⅵ族化合物半导体。离子键结合，有一定的共价键成分。六角晶系铅锌矿型结构，晶格常数0.4299nm。密度5.74g/cm3。熔点1254℃。导带极小值和价带极大值均位于布里渊区中心，为直接带隙半导体。电子和空穴有效惯性质量分别为0.13m和0.4m。室温禁带宽度1.74eV，电子迁移率5×10-2m2/(V·s)。用液相外延、气相外延、分子束外延等方法制备晶体。用高压熔融法制备单晶，用于制作光探测器件。
CAS号：
性质：周期表第Ⅱ、Ⅵ族化合物半导体。离子键结合，有一定的共价键成分。六角晶系铅锌矿型结构，晶格常数0.4299nm。密度5.74g/cm3。熔点1254℃。导带极小值和价带极大值均位于布里渊区中心，为直接带隙半导体。电子和空穴有效惯性质量分别为0.13m和0.4m。室温禁带宽度1.74eV，电子迁移率5×10-2m2/(V·s)。用液相外延、气相外延、分子束外延等方法制备晶体。用高压熔融法制备单晶，用于制作光探测器件。
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参考词条