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1)  low pressure chemical vapor infiltration
低压化学气相渗透法
1.
5-dimension continuous silicon carbide fiber reinforced silicon carbide composites(SiC_f/SiC)on the interface with and without a pyrocarbon layer were fabricated by low pressure chemical vapor infiltration.
采用低压化学气相渗透法制备了具有和不具有热解炭界面层的2。
2)  chemical vapor infiltration
化学气相渗透法
1.
0% fabricated by the chemical vapor infiltration was studied using oxyacetylene ablation equipment.
用化学气相渗透法制备了三维针刺碳纤维增强碳化硅陶瓷基复合材料,复合材料的平均密度为2。
2.
5 D) carbon-fiber-reinforced silicon carbide(C/SiC) composite were prepared by the chemical vapor infiltration process and the tensile properties of the composites along the warp and weft direction were compared as a function of fiber architectures and processing-induced cracks.
采用化学气相渗透法制备了2维和2。
3)  pressure-pulsed chemical vapor infiltration
压力脉冲化学气相渗透
4)  thermal gradient chem-ical vapor infiltration
热梯度化学气相渗透法
5)  chemical vapor infiltration(CVI)
化学气相渗透(CVI)
6)  chemical vapor infiltration
化学气相渗透
1.
TaC was deposited by a chemical vapor infiltration(CVI) method with TaCl5-Ar-C3H6 system in the carbon fiber felt.
利用TaCl5-Ar-CaH6反应体系,用化学气相渗透(CVI)的方法,在炭毡中炭纤维表面沉积TaC。
2.
Chemical vapor infiltration processing (CVI) are considered as the most important technique for fabrication of carbon/carbon composites.
化学气相渗透技术是制备高性能C/C复合材料的一种重要方法。
3.
During thermal gradient chemical vapor infiltration(TCVI)fabricating C/C compos- ites,the complex change of the temperature field is difficult to solve by using analytics.
针对C/C复合材料热梯度化学气相渗透工艺(TCVI)致密化过程温度场难以用解析法求解的问题,建立了TCVI过程非稳态温度场有限元模型,给出了该过程温度场变化的分布曲线,研究了温度场变化规律及致密化效率与沉积温度的关系,数值模拟结果与实验结果吻合较好,为提高TCVI工艺致密化效率提供了理论指导。
补充资料:低压汞灯
分子式:
CAS号:

性质:指汞蒸气压力为1.3~13Pa(0.01~0.1mmHg),主要发射波长在紫外区的253.7nm(0.01mmHg),相当能量为471.0kJ/mol(112.5kcal/mol),占灯的总能量的70%的汞蒸气弧光灯。25℃时,该灯的主射线为253.7和184.9nm。这类灯又称灭菌灯、冷阴极和热阴极灯。低压汞灯光强低,光固化速度慢,但发热量小,不需冷却就可使用,在印刷制版上用得较多。也可用作杀菌灯。

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