2) low pressure chemical vapor deposition
低压化学气相沉积
1.
Boron doped carbon(BCx)thin film was prepared at 1 100 ℃ on carbon fiber substrate by low pressure chemical vapor deposition(LPCVD)from BCl3 and C3H6 as boron and carbon sources respectively.
以 BCl3和 C3H6分别作为低压化学气相沉积制备掺硼碳材料的硼源和碳源,采用热壁化学气相沉积炉,于 1 100 ℃在碳纤维基底上制备了掺硼碳薄膜。
2.
Ge nanowires are synthesized by low pressure chemical vapor deposition (LPCVD) combined with porous alumina template.
采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 。
3) low-pressure chemical vapor deposition
低压化学气相沉积
1.
Synthesize single-wall carbon namotubes by low-pressure chemical vapor deposition method;
低压化学气相沉积法制备单壁碳纳米管
2.
We report a novel method for obtaining high-density Ge-dots/Si multilayered structures by combining low-pressure chemical vapor deposition and metal-induced lateral crystallization.
研究了利用低压化学气相沉积(LPCVD)和金属诱导横向结晶技术制备高密度Ge/Si量子点多层异质结构。
3.
In this paper,we use low-pressure chemical vapor deposition system to synthesize highly vertically aligned CNTs and non-aligned CNTs respectively,and apply them successfully in super-capacitors,field-emission cathode,as well as biological sensors.
本论文利用低压化学气相沉积系统,分别以酞菁铁和乙炔为碳源制备出了高度定向与非定向的多壁碳纳米管,并将其成功应用于超级电容器和场发射阴极以及生物传感器中,在碳纳米管的应用方面作了初步的尝试。
4) LPCVD
低压化学气相沉积
1.
Titanium dioxide then films were prepared by LPCVD.
用低压化学气相沉积法制备ＴｉＯ２薄膜。
2.
The chemical composition, surface micrograph and refractive index of silicon nitride film (SiNx) grown on silicon wafer from SiH4-NH3-N2 system via low pressure chemical vapor deposition (LPCVD) were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transformed infrared spectroscopy (FTIR), atomic force microscope (AFM) and spectroscopic ellipsometer.
通过傅立叶红外光谱(FTIR)和X光电子能谱(XPS)研究了SiH4-NH3-N2体系在不同气体原料比情况下,低压化学气相沉积(LPCVD)SiNx薄膜的化学组成,利用原子力显微镜观察了SiNx薄膜的微观形貌,借助椭圆偏振仪研究了薄膜的折射率。
3.
By using electron spin resonance(ESR),the intrinsic defects in high-quality semi-insulating 4H-SiC prepared by low pressure chemistry vapor deposition(LPCVD)are investigated.
利用电子自旋共振波谱(ESR)仪,分析由低压化学气相沉积(LPCVD)法制备的高纯半绝缘4H-SiC材料本征缺陷。
5) LPPCVD
低压等离子体增强化学气相沉积法
1.
α-C∶H thin films were deposited by low-pressure plasma chemical vapor deposition(LPPCVD)with H2(99.
9999%的H2及反式-2-丁烯(T2B)为工作气体,利用低压等离子体增强化学气相沉积法制备了α-C∶H薄膜。
6) APCVD
常压化学气相沉积法
1.
SiO2 functional coatings with TEOS as substrate and air as carrier gas were prepared on steel HP40(25Cr35Ni) by means of atmospheric pressure chemical vapor deposition(APCVD).
以正硅酸乙酯为源物质,空气为载气,采用常压化学气相沉积法在HP40(25Cr35Ni)合金钢基体上制备了SiO2涂层;研究了沉积温度、源物质温度以及气体流量等工艺参数对沉积速率的影响,并通过XRD和SEM分析了涂层的物相组成及表面形貌。
2.
High activity TiO_2 and its composite catalyst were prepared by Atmospheric PressureChemical Vapor Deposition (APCVD) in this paper.
本文采用常压化学气相沉积法(Atmospheric Pressure Chemical Vapor Deposition，APCVD)制备了TiO_2纤维及其掺杂复合催化剂，通过各种现代分析手段对制得的催化剂进行了表征；并进行了光催化活性测定。
补充资料：低压化学气相沉积
分子式：
CAS号：
性质：一种在低压下利用化学反应进行外延生长方法。其突出的优点是外延生长室为低压，此时载气流速增大，反应物质在表面的扩散系数增大，可减少反应物之间的寄生反应，以及外延生长对反应室的记忆效应，增大纵向均匀性。其压力范围一般在1.0Pa到4×104pa之间。低压外延有时是必须采用的手段，当化学反应对压力敏感，原材料蒸气压很低时，常压下不易进行反应，在低压下变得容易进行。
CAS号：
性质：一种在低压下利用化学反应进行外延生长方法。其突出的优点是外延生长室为低压，此时载气流速增大，反应物质在表面的扩散系数增大，可减少反应物之间的寄生反应，以及外延生长对反应室的记忆效应，增大纵向均匀性。其压力范围一般在1.0Pa到4×104pa之间。低压外延有时是必须采用的手段，当化学反应对压力敏感，原材料蒸气压很低时，常压下不易进行反应，在低压下变得容易进行。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条