1) vapor deposition
气相沉积
1.
Fabricating ceramic hard thin films by vapor deposition techniques;
气相沉积技术制备TiN类硬质膜
2.
The fabrication of TiO_2 nanotubules in porous anodic aluminum template with vapor deposition;
利用气相沉积法在模板中制备TiO_2纳米管的研究
3.
Synthesis of monodisperse Cu nano-particle template by vapor deposition
气相沉积法制备单分散Cu纳米颗粒模板
2) chemical vapor deposition
气相沉积
1.
Ball-like diamond deposited on the chromized layer,P-Si(100) and Al2O3 substrates has been investigated using the hot-filament chemical vapor deposition equipment.
用热丝化学气相沉积设备研究了钢渗铬层、P-Si(100)基片和三氧化二铝基底表面形成的球形金刚石。
2.
Ti/HMS samples were prepared by hydrothermal synthesis(HTS)and chemical vapor deposition(CVD)methods and then silylated by trimethylchlorosilane(TMCS)and hexamethyldisilazane(HMDSZ)in a vapor phase.
分别用水热法和气相沉积法制备了Ti/HMS分子筛,采用三甲基氯硅烷(TMCS)和六甲基二硅氮烷(HMDSZ)对Ti/HMS样品进行了气相硅烷化,并用X射线衍射、N2吸附、红外光谱、29Si核磁共振和紫外-可见光谱对样品进行了表征。
3.
The MoW alloy film with nano-structure has been prepared on Al_2O_3 ceramic substrate using Metal Organic Chemical Vapor Deposition of Mo(CO)_6 and W(CO)_6.
利用羰基金属气相沉积方法,在Al2O3陶瓷基片上,以Mo(CO)6+W(CO)6为源,制备了MoW纳米合金晶膜。
3) CVD
气相沉积
1.
Fluorides CVD Methode for Tungsten Films;
氟化物气相沉积制备钨涂层
2.
Carbon/carbon fibres (C/CF) performbars were prepared by the resin carbonation and carbon CVD.
采用树脂碳化和碳气相沉积相结合的方法制备了碳/碳纤维(C/CF)先驱丝,用压力浸渗凝固成形方法制备了碳/碳纤维/铜(C/CF/Cu)复合材料,借助于扫描电镜下复合材料界面和相分布观察,以及显微硬度和滑动摩擦磨损测试,探讨了基体碳(树脂碳化碳和沉积碳)对C/CF/Cu复合材料成形、显微硬度及摩擦磨损的影响。
3.
SiC thin films of large area were prepared successfully in a plasma-enchanced CVD reactor at room temperature, with silane and ethene used as raw materials and Ar as carrier gas.
采用射频等离子体增强的气相沉积法,以硅烷和乙烯为原料,在常温下成功的合成了碳化硅薄膜。
4) PVD
气相沉积
1.
Tribological Behavior of TiN Coatings Prepared by PVD Reactive Deposition;
TiN气相沉积涂层的摩擦磨损性能研究
5) vapor deposit
气相沉积
1.
Organic silicon were deposited on silicon surface by chemical vapor deposition(CVD).
通过化学气相沉积的方法,在具有规则微形貌的硅片表面沉积硅的有机物制备出了超疏水表面,进而对表面的润湿性进行了对比。
6) CVD
气相沉积法
1.
Nano sam-ples were grown under three different temperature conditions in CVD(Chemical Vapor Deposition) method.
要对纳米ZnO晶体进行了喇曼背散射几何配置下的喇曼测试与分析,其样品采用化学气相沉积法(CVD),分别在三种不同的温度下生长而成。
补充资料：气相沉积
气相沉积
化学气相淀积[cvd(chemical vapor deposition)]，指把含有构成薄膜元素的气态反应剂或液态反应剂的蒸气及反应所需其它气体引入反应室，在衬底表面发生化学反应生成薄膜的过程。在超大规模集成电路中很多薄膜都是采用cvd方法制备。
cvd特点：淀积温度低，薄膜成份易控，膜厚与淀积时间成正比，均匀性，重复性好，台阶覆盖性优良。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。