1) nano-SiC
纳米碳化硅
1.
Polytetrafluorethlene(PTFE) composites with various nano-SiC ratios respectively were obtained by compression molding.
利用冷压烧结法制备了不同含量的聚四氟乙烯/纳米碳化硅(PTFE/纳米SiC)复合材料。
2.
Carbon material is impregnated in solution of phosphate acid with suspended nano-SiC at-0.
095 MPa下,浸渍于加入适量纳米碳化硅的磷酸溶液中,浸渍后样品900℃固化2 h,在空气中700℃下煅烧1 h进行氧化实验。
3.
The photoluminescence (PL) and photo-generated carriers decay properties of nano-SiC films have been studied.
通过傅立叶变换红外吸收光谱、紫外-可见透射光谱、高分辨透射电镜、原子力显微镜、扫描电子显微镜等技术对纳米碳化硅的微观结构进行了表征和分析。
2) nano-SiC particles
纳米碳化硅
1.
To improve unlubricated sliding wear properties of Epoxy, nano-SiC particles were incorporated as fillers to fabricate composites.
以提高环氧树脂的摩擦磨损性能为目的,研究了纳米碳化硅粒子填充环氧树脂复合材料的滑动干摩擦磨损特性,着重探讨纳米粒子表面接枝改性、纳米粒子含量、摩擦条件等对复合材料摩擦学性能的影响。
2.
Nano-SiC Particles were modified with surfcant agent and solution in Oil by physics machine methods,prepared with sold Nano-SiC Particle
以市售的碳化硅为原料,用表面活性剂对纳米碳化硅修饰,用物理和机械的方式分散,配制的纳米润滑油具有良好的抗磨性和储存稳定性,纳米碳化硅可以明显提高柴油机油的抗磨减磨性能
3) Ni-nano SiC
镍-纳米碳化硅
4) SiC nanofibers
碳化硅纳米纤维
1.
SiC nanofibers were prepared by the thermal evaporation of Si fragments onto the PAN carbon fibers at 1500℃.
1500℃下,采用热蒸发硅碎片的方法,在PAN碳纤维上原位生长碳化硅纳米纤维。
2.
Straight-line, bamboo-like and beaded SiC nanofibers were prepared by the sol-gel and car-bothermal reduction method, in which lanthanum nitrate and surfactant CTAB were employed as additives for structural control.
结果表明,通过此方法所制备的碳化硅纳米纤维均为β- SiC,分别具有直线状、竹节状和链珠状三种不同形貌。
5) silicon carbide nanotubes
碳化硅纳米管
1.
First-principles study of the electonic structure of nitrogen-doped silicon carbide nanotubes
掺氮碳化硅纳米管电子结构的第一性原理研究
2.
In this paper,we perform density functional calculations for the geometric structures and strain energy of silicon carbide nanotubes.
本文采用密度泛函方法研究了碳化硅纳米管的几何结构和相对于3C-SiC的应变能。
3.
By employing density-functional theory calculation, the electronic structure,orbitals and optical properties of armchair silicon carbide nanotubes (SiCNT) are discussed in this paper.
本文基于密度泛函理论研究了扶手椅型碳化硅纳米管(SiCNT)的电子结构、成键机制以及其光学性质。
6) SiC nanowires
碳化硅纳米线
1.
XRD, SEM, TEM and EDX were used to characterize the SiC nanowires.
以酚醛树脂为碳源,正硅酸乙酯为硅源,硝酸镧和表面活性剂为调控剂,通过溶胶-凝胶和碳热还原反应制备了不同形貌的碳化硅纳米线。
补充资料：碳化硅晶须补强碳化硅陶瓷基复合材料
分子式：
CAS号：
性质：以碳化硅陶瓷为基和以碳化硅晶须为增强剂的新型陶瓷材料。通过晶须的载荷转移、拔出及裂纹偏转作用，获得比普通碳化硅更高的强度和韧性。使用温度达1400℃。是一种重要的高温结构陶瓷。用于燃气轮机叶片等高温部件和耐磨件制造。采用原位生长工艺和烧结工艺制取。
CAS号：
性质：以碳化硅陶瓷为基和以碳化硅晶须为增强剂的新型陶瓷材料。通过晶须的载荷转移、拔出及裂纹偏转作用，获得比普通碳化硅更高的强度和韧性。使用温度达1400℃。是一种重要的高温结构陶瓷。用于燃气轮机叶片等高温部件和耐磨件制造。采用原位生长工艺和烧结工艺制取。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条