Al-doped ZnO thin films were fabricated on glass substrates by solgel method.

N-doped ZnO thin films are grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (α-Al_2O_3) using NO as oxygen source and nitrogen dopant.

ZnO thin film was deposited on nucleation side of freestanding diamond film by RF reactive magnetron sputtering.

Preparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method;

So it could be used as substrate materials of ZnO films.

ZnO films were prepared by pulsed laser deposition on crystal silicon substrate.

In this paper, photoluminescence of ZnO thin films, which were deposited by reactive r.

The ZnO thin films are fabricated by electrodeposition on n-type InP wafers at constant potential.

The vacuum evaporation was used for the deposition of Zinc precursor layers,and ZnO thin films were prepared by oxidizing the precursor in the air in the post treatment of annealing processing at different temperatures.

ZnO films were prepared on glass substrates by a sol-gel spin-coating method from 3 to 9 layers.

In the experiment, reflection spectra of ZnO films, which deposited on Si substrate, were measured.

Using DC reaction sputtering, ZnO films were deposited on Si and quartz substrates, respectively.

A layer of zinc acetate was sprayed on the surface of glass, and then a zinc oxide film as a semiconductor was formed by pyrolysis.

Optical and electrical properties of Al-doped ZnO thin films;