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1)  pulsed laser ablation
脉冲激光烧蚀沉积
2)  Laser Ablation
激光烧蚀沉积
1.
Deosition and Characterization of SiNanomaterial Produced by Pulsed Laser Ablation;
激光烧蚀沉积硅基纳米材料及其特性研究
3)  pulsed laser ablation
脉冲激光烧蚀
1.
Determination of the region where Si nanoparticles form during pulsed laser ablation;
脉冲激光烧蚀制备纳米Si晶粒成核区位置的确定
2.
Influence of the ambient pressure of Ar on the average size of Si nanoparticles deposited by pulsed laser ablation;
Ar环境气压对脉冲激光烧蚀制备纳米Si晶粒平均尺寸的影响
3.
In argon (Ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation.
采用脉冲激光烧蚀技术在氩气环境下制备了纳米硅薄膜,研究了环境气体压强对纳米硅薄膜表面形貌的影响。
4)  PLD
脉冲激光沉积
1.
Surface Morphology and Photoluminescence Properties of ZnO Films Deposited with PLD;
脉冲激光沉积ZnO薄膜的微结构及发光性能
2.
PLD Preparation and Application of TiNi SMA Thin Film;
TiNi合金薄膜的脉冲激光沉积制备与应用
3.
Microstructures and Properties of Semiconductor Materials with Pulsed Laser Deposition (PLD);
脉冲激光沉积(PLD)半导体材料结构特性的研究
5)  pulse laser deposition
脉冲激光沉积
1.
Preparation of single-phase Nd_(1.85)Ce_(0.15)CuO_4 thin films by pulse laser deposition and the laser-induced thermoelectric voltage effect
脉冲激光沉积生长单相的Nd_(1.85)Ce_(0.15)CuO_4薄膜及其激光感生热电电压效应
2.
In order to study the surface emission mechanism of La2O3-Mo cathode,film cathodes were studied by using a set of equipment,specially designed for cathode research,with which film cathode can be prepared by pulse laser deposition.
为了研究镧钼阴极表面发射机制,采用专为研究阴极设计的与俄歇能谱仪相连的脉冲激光沉积装置制备薄膜阴极。
3.
Unhydrogenated diamond-like films were prepared by pulse laser deposition technique at different substrate temperature.
使用脉冲激光沉积技术制备了系列无氢类金刚石薄膜,测量了样品的Raman光谱、光吸收光谱和光致发光光谱,研究了薄膜结构和光致发光性质与制备条件的依赖关系。
6)  pulsed laser deposition
脉冲激光沉积法
1.
Recent advances on ZnO-based films synthesized by pulsed laser deposition;
脉冲激光沉积法制备ZnO基薄膜研究进展
2.
The even single phase βFeSi_2 thin films were prepared by femtosecond pulsed laser deposition(PLD) on Si(111) wafers at different temperature using an FeSi_2 alloy target,and excimer(nanosecond) PLD was introduced to prepared β-FeSi_2 thin films also.
用FeSi2合金靶作为靶材,采用准分子激光沉积法在Si(111)单晶基片上制备了单相的-βFeSi2薄膜,并将飞秒脉冲激光沉积法(PLD)引入到-βFeSi2薄膜的制备工艺中;用X射线衍射仪(XRD),场扫描电镜(FSEM),能谱仪(EDS),紫外可见光光谱仪研究了薄膜的结构、组分、表面形貌和光学性能。
3.
5CoO3(LSCO) oxide thin films were realized on SrTiO3(001) substrates by pulsed laser deposition.
利用脉冲激光沉积法在STO(001)基片上外延生长了La0。
补充资料:激光烧蚀
分子式:
CAS号:

性质: 是电感偶合等离子体质谱(ICP-MS)联用仪器中用来分析固体样品的一种进样方式。固体样品制成片状置于样品台上,样品表面处于激光束聚焦点上。使用红宝石激光器。一次0.5J的激光轰击,能在样品上产生一个直径为0.5mm,深0.5mm的小坑,消耗样品0.2mg。让等离子体注射气流流过样品表面,再经一导管导入等离子炬,样品在焰炬中即可电离。激光烧蚀所用激光器为大功率、高重复激光器,大面积采样。这样采样均匀性好,而且不受样品种类限制。采用激光烧蚀质谱技术,可以对样品微区进行分析。

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