1) Si-based nanowires
Si基纳米线
1.
Preparation of one dimension, two dimension and three dimension Si- based nanowires;
一维,二维和三维Si基纳米线的制备
2) silicon nanowires
Si纳米线
1.
The process of nickel film growth on the silicon nanowires was studied.
研究了Si纳米线表面Ni薄膜生长工艺。
2.
In this paper,we mainly introduce and review some new progresses for the fabricated technology of silicon nanowires based on vapor-liquid-solid(VLS),vapor-solid-solid(VSS),solid-liquid-solid(SLS) and oxide-assisted growth(OAG) mechanisms.
以气-液-固(VLS)、气-固-固(VSS)、固-液-固(SLS)和氧化物辅助生长(OAG)机制为主线,着重介绍与评论了几种主要的Si纳米线的制备方法,如激光烧蚀沉积(LAD)、化学气相沉积(CVD)、热蒸发和金属(Au,Fe,Ni和Al)催化生长等。
3) Si-based nanomaterials
Si基纳米材料
1.
However, efficient luminescences of these materials depend on the efficient light-emission of various Er-doped Si-based nanomaterials, such as nc-Si:Er~(3+)/SiO_2, Er-doped porous Si, α-Si:Er~(3+)/SiO_2 superlattice, etc.
本文中, 我们以SiO2 介质镶嵌的纳米晶Si薄膜 (nc Si/SiO2 )作为基质, 将稀土离子Er掺入其中所形成的nc Si:Er3+ /SiO2 薄膜材料为主, 介绍了nc SiEr3+之间的能量转移过程, 探讨了实现各类掺Er的Si基纳米材料高效率发光的可能途径。
4) nano-silicon
纳米Si(n-Si)
5) Si nanocrystals SiO_x
纳米Si-SiO_x
补充资料：维纳斯（米洛斯）(Weinɑsi
见阿佛洛狄忒(米洛斯)。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条