1) Si nanocrystals
Si纳米晶
1.
In this thesis, Si nanocrystals were obtained by reactive sputtering and thermal activated reaction, and its photoluminescence properties, microstructure, phase structure and surface bond structure were measured and analyzed.
本论文分别采用了反应溅射法和热活性法两种途径制备Si纳米晶,对其光致发光性能、微观组织、相结构和表面价键进行了分析,并对纳米晶的发光机理进行研究。
3) Si nanoparticles
纳米Si晶粒
1.
Determination of the region where Si nanoparticles form during pulsed laser ablation;
脉冲激光烧蚀制备纳米Si晶粒成核区位置的确定
2.
Influence of the ambient pressure of Ar on the average size of Si nanoparticles deposited by pulsed laser ablation;
Ar环境气压对脉冲激光烧蚀制备纳米Si晶粒平均尺寸的影响
3.
Relation between target-substrate separation and size-uniformity of Si nanoparticles prepared by laser ablation;
激光烧蚀制备纳米Si晶粒尺寸均匀性与靶衬间距的关系
4) Er-doped nanocrystalline Si film
掺Er纳米Si晶粒
5) nanocrystal α-Fe(Si)
纳米晶α-Fe(Si)
6) Si nanotransistor
Si纳米晶体管
1.
As a representative,Intel Corporation is studying the sub-50-nm Si nanotransistors,and when they developed THz CMOS planar transistors,they overcame a lot of difficulties such as gate leakage current ,off-state leakage,resistance enhanced and higher operation voltage.
目前,Si纳米晶体管的小型化并没有停止的趋势,除此以外,碳纳米管晶体管、Mott转变纳米晶体管以及有机纳米晶体管都在受到大力关注和正在研制之中。
补充资料：维纳斯（米洛斯）(Weinɑsi
见阿佛洛狄忒(米洛斯)。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条