1) CZ-Si crystal
CZ-Si单晶
1.
Recent research progress in void-type defects in large diameter CZ-Si crystals is reviewed in this paper.
概要介绍了近年来国内外对大直径CZ-Si单晶中空洞型缺陷的研究进展,详细阐述了COPs、LSTDs和FPDs3种空洞型原生缺陷的基本性质、形成过程以及3种消除空洞型缺陷的方法。
2) crystalline silicon
单晶Si
1.
Crystalline silicon samples were implanted at room temperature with 1.
55 MeV、5×1015×1016/cm2注量的3He离子注入单晶Si,采用透射电子显微镜(TEM)观测分析了高温退火后单晶Si中由注入引起的损伤形貌,同时使用核反应分析(NRA)技术研究了3He气体原子的热解吸。
3) p-type Si single crystal
p-Si单晶
4) N doped Si crystal
含氮Si单晶
5) eutectic Si
共晶Si相
1.
The effect of the solidified rate on the morphology of eutectic Si and α-Al dendrite was studied by mean of scanning electron microscope(SEM).
利用扫描电子显微镜,研究凝固速度对共晶Si相、α(Al)树枝晶形态的影响。
2.
The results show that with the increase of superheat treatment temperature, the undercooling increases, and the superheat treatment results in remarkable refinement of the α-Al dendrite and the particle or fibre transition of the eutectic Si.
结果表明:随着超温处理温度升高,过冷度增大;熔体超温处理使得α-Al相二次枝晶间距变小,共晶Si相颗粒化和纤维化;相同冷却速率下,熔体中Aln、Sin类原子团簇的类型和大小的变化决定了α-Al二次枝晶间距的减小。
6) eutectic Si
共晶Si
1.
The results show that,without magnetic field,the plate-like primary Si concentrates at the edge of the sample,and the center is concentrated with the eutectic Si;exerting rotary magnetic field on the P-Salt modified hypereutectic Al-18%Si alloy,the primary Si is thick and block-like and concentrates at the edge of the sample,and the center concentrates with the eutectic Si;exerting static mag.
结果表明:变质处理后,不施加磁场的条件下,块状初晶Si偏聚在试样边缘处,试样中心处为共晶Si;施加旋转交变磁场的条件下,粗大的板条状初晶Si偏聚在试样边缘处,试样中心处为共晶Si;施加静磁场的条件下,在试样整个横断面上初晶Si都是细小的块状,且大小和分布均匀。
2.
It is found that the sample modified by Na-salt was kept 720℃ for 20 minutes under the condition without high magnetic filed,coarse plate-like or acicular eutectic Si appear on section of the sample and distribution of eutectic Si is unevenly;but under the condition with high magnetic filed,Eutectic Si become fine.
对Al 6Si亚共晶铝硅合金进行Na盐变质处理后,重熔并在720℃下保温20min时,如果不施加强磁场,共晶Si呈粗大的针片状,长度和分布不均匀,凝固组织为未变质组织,即发生了重熔失效的现象。
3.
With studying on the eutectic Si modification, many new evidences were found one after the other and hence some new mechanisms were put forward.
随着对共晶Si变质机理的深入研究,相继发现了一些新的证据,提出了一些新的假说。
补充资料：直拉(CZ)生长中的硅单晶
直拉(CZ)生长中的硅单晶
卿 直件以一Z)月几、山，卜月，’.户·‘手
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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