1) diphasic silicon films
两相硅薄膜
1.
Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility life_ time product and bandgap were estimated by means of effective_medium theory.
根据这些模拟结果,分析讨论了在考虑Lambertian背反射的情况下,非晶微晶叠层电池的底电池采用晶相比为40%—50%的两相硅薄膜材料做本征层是最佳选择。
2) double-layer films
两层薄膜
3) silicon thin film
硅薄膜
1.
Stability of mixed phase silicon thin film material under light soaking;
相变域硅薄膜材料的光稳定性
2.
Different structural silicon thin films deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) were studied at the use of purifier or not.
本文采用VHF PECVD技术制备了不同结构的硅薄膜 ,分析研究了有、无纯化器对制备薄膜特性的影响。
3.
Through scanning electronic microscopy(SEM) measurement,the morphologies of silicon thin film were investigated.
用射频等离子体增强化学气相沉积(RF-PECVD)系统在普通玻璃衬底上制备了氢化非晶硅薄膜(a-Si∶H),用改进的快速光热退火炉(RTP)对薄膜进行了低温下的退火处理。
4) Co-Si thin films
钴硅薄膜
5) silicon film
硅薄膜
1.
Fabrication and structure research of silicon films prepared by RF magnetron sputtering
射频磁控溅射硅薄膜的制备与结构研究
2.
The amorphous silicon films were prepared by atmospheric pressure chemical vapor deposition (APCVD) on a moving substrate from a gas mixture of silane and ethylene at 620℃ .
采用APCVD工艺用硅烷和乙烯为原料在620℃沉积硅薄膜。
3.
The study of making silicon film on trenched silicon substrate is done for the silicon MEMS movability parts, a efficacious method is gained for making silicon film on trenched silicon substrate, the film uniformity is±0.
对硅基MEMS的可动部件很多都是采用在带图形的硅衬底上制备的硅薄膜通过深槽腐蚀释放获得的特点,开展在带图形的硅衬底上制备硅薄膜技术研究,得到一种通过两次硅硅键合、减薄抛光、一次湿法腐蚀硅相结合的在带图形的硅衬底上制备硅薄膜的有效方法,该方法制备出了的薄膜厚度为10μm,均匀性为±0。
6) silicon films
硅薄膜
1.
By Raman spectroscopy, high resolution electron microscope and atomic force microscope, the structure of phosphorus doped hydrogenated nano crystalline silicon films (nc Si (P)∶H) was analyzed The films possess orderly arranged cluster feature in the size of 15～20?nm.
采用喇曼 (Raman)散射谱、高分辨率电子显微镜 (HRTEM)和原子力显微镜 (AFM)对掺磷纳米硅薄膜的微结构进行了分析 ,并对纳米硅薄膜的传导机制进行了探讨 。
2.
The effects of a showerhead electrode and longitudinal flow electrode on the growth of silicon films in a PECVD system are studied.
在制备硅薄膜材料的PECVD系统中,分别采用普通平行板电极和网状电极,在相同的工艺条件下研究了电极结构对硅薄膜材料均匀性、电学性能以及微结构的影响。
3.
Silicon films have been prepared with silane (SiH_4) as the source gas by atmosphere pressure chemical vapor deposition (APCVD) on moving glass substrates under the conditions simulating technical process on float glass.
本文介绍了硅薄膜的发展状况、结构特点、性质以及应用,详细阐述了硅薄膜制备技术——化学气相沉积(CVD)方法的原理、特点和用途等,并简要概述镀膜玻璃的节能性能表征。
补充资料：铬硅电阻薄膜
分子式：
CAS号：
性质：以铬和硅为主成分的薄膜高阻材料。具有电阻率高、稳定性好、电阻温度系数小等特点。控制硅化物结构，可得到各种电性能材料。如随铬增加，电阻率下降，电阻温度系数可从负数逐渐变到正值，一般方阻3～5kΩ，电阻温度系数(100～150)×10-6/℃。采用溅射、电子束蒸发、真空蒸镀等方法制取，主要用于制作薄膜混合集成电路中的薄膜电阻器。
CAS号：
性质：以铬和硅为主成分的薄膜高阻材料。具有电阻率高、稳定性好、电阻温度系数小等特点。控制硅化物结构，可得到各种电性能材料。如随铬增加，电阻率下降，电阻温度系数可从负数逐渐变到正值，一般方阻3～5kΩ，电阻温度系数(100～150)×10-6/℃。采用溅射、电子束蒸发、真空蒸镀等方法制取，主要用于制作薄膜混合集成电路中的薄膜电阻器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条