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1)  distorted perovskite structure
扭曲钙钛矿结构
1.
Using the divalence element Sr to replace the position of La in LaMnO 3 materials,  La 1-x Sr x MnO 3 materials has been successfully prepared with excellent single phase and distorted perovskite structure and magnetoresistance effect.
利用二价金属元素Sr 对LaM nO3 材料进行了La 位替代,成功地制备了单相性好、具有扭曲钙钛矿结构和磁阻效应的La1- x Srx M nO3 材料。
2)  perovskite structure
钙钛矿结构
1.
XRD PATTERN CHARACTER OF SrTiO_3-based perovskite structure;
SrTiO_3基钙钛矿结构X射线衍射谱特征
2.
2) powders with an orthogonal perovskite structure were prepared using the sol-gel method.
XRD图谱表明Nd1-xZnxFeO3粉体为正交钙钛矿结构,产物为纳米级颗粒(16~17。
3.
6)all have orthorhombic perovskite structure.
研究表明:合成的系列纳米材料均具有正交钙钛矿结构,Mn的掺杂对材料La0。
3)  perovskite [pə'rɔvz,kait]
钙钛矿结构
1.
Colossal magnetoresistance effect in the perovskite-type La_(0.9)Sb_(0.1)MnO_3 material;
钙钛矿结构La_(0.9)Sb_(0.1)MnO_3的庞磁电阻性质
2.
Study on Preparations and Magnetic Properties of Manganites with Perovskite Structure;
钙钛矿结构锰氧化物的合成及性质研究
3.
The LaNiO_3 samples with perovskite structure were prepared using citric acid aqueous solution, then heated at high temperature in air.
利用柠檬酸盐分解法,在空气气氛中高温烧结,合成了钙钛矿结构的LaNiO3。
4)  Perovskite Type Structure
钙钛矿结构
1.
The effects of composition and crystal lattice of lead-free ceramics with perovskite type structure, which is employed in dielectric capacitor applications, have been widely investigated.
本文以具有钙钛矿结构的无铅电容器陶瓷材料[BaTiO_3、Bax(Bi_(0。
5)  perovskites structure
钙钛矿结构
6)  perovskite structure
钙钛矿型结构
1.
2CoO_3 oxides with different φ have perovskite structure.
2CoO3催化剂具有钙钛矿型结构,催化剂的结构和性能随φ的不同而变化,当φ=1。
2.
This paper describes the current researches in this sector in the world from the perspective of the perovskite structure,and points out the recent developments of lead-free piezoelectric ceramics and the major systems used in their research sector.
本文结合国际开发研究现状,从压电结构的钙钛矿型结构入手,主要论述了无铅压电陶瓷的发展现状,以及目前主要的无铅压电陶瓷的研究体系。
补充资料:钙钛矿型铁氧体
分子式:
CAS号:

性质:又称钙钛矿型铁氧体。具有钙钛矿型结构的铁氧体。其化学式为AFeO3(式中A为Y或一部分其他稀土元素)。其晶体结构与天然钙钛石(CaTiO3)相同,属正交晶系。具有单轴各向异性。饱和磁化强度很低,约为(4.9~11.4)×10-4T,其泡径(磁泡处于稳定状态时的直径)较大,迁移率较低。用它制作的磁泡存储器具有非挥发性、抗辐射能力强。利用薄膜技术可实现集成化,在密度与半导体存储器相同情况下功耗约可低2~3个数量级。主要用作磁泡材料。

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