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1)  simulation/amorphous carbon films
模拟/非晶碳膜
2)  amorphous carbon film
非晶碳膜
1.
N-implantation into amorphous carbon films with different doses was carried out to study the formation of CN bonding.
利用Raman和XPS研究N离子注入前后非晶碳膜化学键合的变化及CN成键情况。
2.
So it is important to analyze the sp~2 and sp~3content in amorphous carbon film qualitatively or quantitatively.
sp2和sp3碳原子的比例是决定非晶碳膜的结构和性能的重要参数。
3)  amorphic carbon film
非晶碳膜
1.
Several amorphic carbon films with different thickness were deposited on singlecrystal silicon by means of pulse laser ablating graphet target.
用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了不同厚度的非晶碳膜。
2.
Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
在室温下 ,用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了不同厚度的非晶碳膜。
4)  Amorphous carbon
非晶碳膜
1.
Then thin amorphous carbon film was deposited on SiC film by D.
本课题采用磁控溅射的方法在以GCr15为主的基材上制备了C/SiC双层耐磨减摩薄膜:用射频磁控溅射法分别在衬底加热与不加热时首先沉积一层SiC硬膜,然后采用直流磁控溅射法在其表面沉积非晶碳膜。
5)  Amorphous carbon film
非晶碳薄膜
1.
Hydrogenated amorphous carbon films were deposited using ECR plasma with benzene as carbon source at varying substrate temperature.
用苯作为源气体 ,使用微波电子回旋共振 (ECR)等离子体气相沉积法在不同温度下制备了含氢非晶碳薄膜 ,研究了沉积温度对薄膜的直流电阻率、击穿场强的影响 ,发现它们与沉积速率密切相关 。
2.
The results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions.
用苯作源气体在一个微波电子回旋共振等离子体系统中沉积了含氢非晶碳薄膜 ,研究了沉积参数对膜的生长速率的影响。
6)  a-C:H film
非晶碳氢膜
1.
An amorphous hydrogenated carbon thin film(a-C:H film) on polyethyle-neterephthalate (PET) was fabricated by plasma-enhanced chemical vapor deposition(PECVD) with methane as the source of carbon , argon as dilution gas.
本课题采用射频等离子体增强化学气相沉积法(PECVD),以甲烷气体为碳源,氩气为稀释气体,在聚酯(PET)上沉积非晶碳氢膜。
补充资料:模拟阳光碳弧人工老化机
分子式:
CAS号:

性质:   试验涂层用的人工老化机的一种类型。利用碳棒内含有的金属元素不同,使发出的光谱除了包括紫外光区域278~400nm的以外,可见光部分领域也很大,红外光部分则很少,这样就使灯源的光谱能量与太阳的光谱能量分布较为接近。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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