1) phase change memory
相变存储器
1.
Technology and status of embedded phase change memory;
嵌入式相变存储器的技术特点和研究现状
2.
Storage characteristics of phase change memory cells based on Sn-doped Ge_2Sb_2Te_5;
基于Sn掺杂Ge_2Sb_2Te_5的相变存储器器件单元存储性能
3.
Multiple-state storage capability of nitrogen-doped Ge_2Sb_2Te_5 film for phase change memory;
氮掺杂Ge_2Sb_2Te_5相变存储器的多态存储功能
2) phase change random access memory
相变随机存储器
3) PCRAM chip
相变存储器芯片
4) phase-change semiconductor memory
相变型半导体存储器
5) high-density phase change random access memory (PCRAM) arrays
高密度相变存储器阵列
6) phase-change optical storage
相变光存储
1.
In the present article, the state-of-the-art and new development in phase-change optical storage are reviewed including the principle, the improvement in the performance of the materials and the technology for high density .
可擦重写相变光存储介质和技术吸引着越来越多研究者的兴趣。
补充资料：随机存取存储器(见半导体存储器)
随机存取存储器(见半导体存储器)
random access memory,RAM
s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条