1)  Single-Sequence
Single-Sequence
1.
The Boundary Constraints of Floorplanning Based on Single-Sequence;
基于Single-Sequence布图规划边界约束问题的研究
2)  Si
Si
1.
DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure;
DCXRD分析Ge/Si(001)多层纳米岛材料(英文)
2.
ICP-AES Determination of Mn,Si,Al,Ti,Nb,La in Ultrahigh Strength Steel;
ICP-AES法测定超高强度钢中Mn,Si,Al,Ti,Nb,La杂质元素
3.
Effects of Trace Si,Ba and Sn on the As-cast Microstructure of AZ91 Magnesium Alloy;
微量Si、Ba、Sn对AZ91铸态组织的影响
3)  Silicon
Si
1.
Mechanism of effect of nutrient silicon and water temperature on phytoplankton;
营养盐Si和水温影响浮游植物的机制
2.
Silicon, aluminium and other, a total of 10 elements in different kinds of biological samples, were measured by ICP-AES.
探讨不同种类生物样品中Si和Al等10种元素的测定方法,采用干灰化结合偏硼酸锂碱熔灰分的前处理方法,用电感耦合等离子体原子发射光谱法(ICP-AES)同时测定试样中Si和Al以及Ca,Mg,Fe,Na,P,Mn,Sr,Ti。
3.
This suggests that sodium attack of both aluminium and Al-12%Si alloy is the result of a reaction between sodium and the silicon contained in the aluminium.
本文研究了纯Al及Al－12％Si合金在液态Na中的腐蚀特性。
4)  Si)
Si）
5)  a-Si
a-Si
1.
Inner circuit and noise equivalent temperature difference (NETD) of the a-Si FPA were analyzed and the equation of NETD was deduced at length.
本文根据对a-Si微测辐射热计焦平面内部的微观电路结构和噪声等效温差(noise equivalent temperature difference,NETD)的分析,经过详细地推导NETD公式,认为可调节两个偏置电压,使焦平面可以在较低的温度下稳定工作。
2.
In this dissertation，preparation and thermoelectric characterization of conventional silicon-based materials and devices have been studied, including amorphous silicon (a-Si) films, polycrystalline silicon germanium (polySiGe) films and amorphous silicon thin-film-transistors (a-Si TFT).
本文深入系统地研究了a-Si薄膜、polySiGe薄膜和a-Si TFT等三种常规硅基材料和器件的制备方法和热电特性，开发了一套新型的基于多孔硅牺牲层技术的MEMS-IC集成工艺，利用该工艺成功地制作了a-Si和polySiGe薄膜电阻式测辐射热计，在国际上首次提出并实现了基于a-Si TFT的室温红外探测器单元与8×8阵列原型，器件初步具备了室温红外热成像的能力。
6)  Si/Si
Si/Si
参考词条
补充资料：indium arsenic phosphide single crystal
分子式：InAsxP1-x 0≤x≤1 
CAS号：

性质：周期表Ⅲ，V族元素化合物半导体。共价键结合，有一定离子键成分。立方晶系闪锌矿型结构，为直接带隙半导体。禁带宽度随x值变化在1.34～0.356eV范围。电子迁移率0.4～0.75m2/(V·s)。采用区域熔炼，直拉法制备单晶。为制作近红外发光和激光器件材料和冷阴极电子发射材料。

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