1) SiO2 gate dielectrics
SiO2栅介质
1.
Some problems of SiO2 gate dielectrics, requirements for high k materials as MOSFET gate dielectrics and the latest development of high k gate dielectrics instead of traditional SiO2 were reviewed.
综述了超薄SiO2栅介质层引起的问题、MOS栅介质层材料的要求、有希望取代传统SiO2的高k栅介质材料的研究进展。
2) decrease of SiO_2 layer thickness
SiO2栅介质减薄
3) ultra-thin SiO 2 gate dielectrics
超薄SiO2栅介质
4) ultra-thin Si 3N 4/SiO 2(N/O)stack gate dielectrics
超薄Si3N4/SiO2(N/O)stack栅介质
5) ultra-thin N/O stack gate dielectrics
超薄Si3N4/SiO2叠层栅介质
6) SiO2 dielectric
SiO2介质
补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条