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1)  growth sector
生长区界面
1.
It is found that the main defects are ferroelastic domains, antiphase domains, growth layers, growth sectors and dislocations.
这些缺陷是铁弹畴、反相畴界、生长层和生长区界面,探讨了它们的成因及其克服办
2)  interface growth
界面生长
1.
A method,homogeneous reaction and interface growth,has been used to fabricate nano-materials.
采用均相反应界面生长法成功地制备了多种形貌的纳米铜,讨论了界面生长法制备纳米粒子的机理,考察了界面生长及反应温度的改变对产物形貌的影响。
3)  growing interface
生长界面
1.
Auger electronic energy spectrum was applied in the paper to analyze the metallic film surface of growing interface of diamond monocrystal and fine Auger spectrum of adjacent carbon atom,as well as Auger spectrum structure of the surroundings and surface of diamond monocrystal.
用A uger电子能谱技术分别进行金刚石单晶生长界面的金属膜表面及附近碳原子的精细A uger谱分析、金刚石单晶附近及其表面的A uger谱精细结构分析。
2.
Furthermore,the crystal morphology and the growing interface were also discussed.
此外,我们对晶体的外形和生长界面作了讨论。
4)  Growth Interface
生长界面
1.
Research on Growth Interface of Diamond Crystal under the High Pressure and Temperature Environment;
高温高压条件下金刚石单晶生长界面的研究
2.
The critical width of the temperature pulse to avoid the temperature wave penetrating the boundary layer and reaching to the growth interface at a constant rotation speed is discussed.
本文从温度波在熔体中传播的理论以及熔体速度边界层理论出发,研究了温度脉冲宽度与温度波的频率、波长对BBO熔体的穿透深度之间的关系;讨论了在一定转速下为不使温度波穿透边界层到达生长界面所容许的温度脉冲宽度,从而为BBO晶体的生长提供了依
5)  plane interface growth
平界面生长
1.
The critical velocity of plane interface growth of MnSb/Sb rod eutectic (fibrous composite) is experimentally obtained by directional solidification technique.
用定向凝固法揭示了MnSb/Sb棒状共晶 (纤维复合材料 )平界面生长条件。
6)  interface growth method
界面生长法
1.
5 nm diameter oil-soluble sphere nano-copper was prepared by oil-water interface growth method,using copper acetate tetrahydrate as precursor,ascorbic acid as reductant,polyethylene sorbitan monooleate (Tween-85) as modifier,and 1-butanol as growth agent.
采用界面生长法,以醋酸铜为母体,抗坏血酸(Vc)为还原剂,吐温-85为修饰剂,正丁醇为生长剂,合成了粒径约15。
补充资料:区界
1.区别,界限。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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