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1)  ZnTe-ZnS strained layer superlattices
ZnTe-ZnS应变超晶格
1.
Photoluminescence properties of ZnTe-ZnS strained layer superlattices (SLS) grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure (AP) were studied.
研究了常压MOCVD方法生长在GaAs(100)衬底上的ZnTe-ZnS应变超晶格光学性质。
2)  ZnSe-ZnS superlattice
ZnSe-ZnS超晶格
3)  strained superlattices
应变超晶格
1.
The electronic band Structures of strained strained GaAs layers grown on GexSi1-x alloys in (001) plane and strained superlattices(Si2)4/(GaAs)4 grown on Si substrates in (001)plane are calculated in tight-binding frame.
采用紧束缚方法计算了生长在GexSi1-x合金(001)面上的应变GaAs层以及生长在Si(001)面上的应变超晶格(Si2)4/(GaAs)4的电子能带结构。
4)  strained-layer superlattice
应变超晶格
1.
The GexSi(1-x)/Si strained-layer superlattices avalanche photodetector has been studied and optimum designed.
对GexSi(1-x)/Si应变超晶格雪崩光电探测器进行了分析与优化设计。
2.
The present paper cover the conditions for the growth of InGaAs/GaAs andInGaAs/InP strained-layer superlattices by low pressure metalorganic vapor pliase epitaxy.
本文探讨了LP-MOVPE法在GaAs和InP衬底上生长21个周期的InGaAs/GaAs和20个周期的InGaAs/InP两种应变超晶格的条件,并用X射线衍射分析了这两种应变超晶格,分析观察到三级卫星峰和六级卫星峰。
3.
The X-ray diffraction (XRD) method was used in the investigation of the structure of (GdTe-ZnTe)/ZnTe /GaAs(100) strained-layer superlattice.
用X射线衍射,并结合X射线动力学衍射理论模型的计算机模拟方法,对(CdTe-ZnTe)/ZnTe/GaAs(100)应变超晶格材料的结构进行了研究,得到了其结构参数和信息。
5)  ZnS/CdS single offset superlattice
ZnS/CdS单带差超晶格
1.
Preparation and optical performance study of ZnS/CdS single offset superlattice
ZnS/CdS单带差超晶格薄膜的制备及光学性质研究
6)  strained-layer superlattice
应变层超晶格
1.
The interface structure of InAs/GaInSb strained-layer superlattice;
InAs/GaInSb应变层超晶格材料的界面结构
2.
The electronic structures of the(GaN)_n/(AlN)_n strained-layer superlattice under free-standing conditions are calculated with the recursion method.
以FreeStanding条件生长的超晶格原胞为计算模型,运用LCAORecursion方法研究了(GaN)n/(AlN)n(001)应变层超晶格的电子结构。
3.
X-ray diffraction curves of Ⅱ-Ⅵ compound strained-layer superlattice grown by metal organic chemical vapor deposition (MOCVD) were measured by using computercontroled X-ray diffractometer.
本文报导了用计算机控制的衍射仪(CuKα辐射)测量的金属有机化学汽相沉淀(MOCVD)方法生长的Ⅱ-Ⅵ族应变层超晶格的X射线衍射曲线,观察到了超晶格结构的多级卫星峰,且卫星峰的强度随角度呈周期性变化。
补充资料:A和B交替生长的超晶格结构


A和B交替生长的超晶格结构


  A和B交替生长的超晶格结构层厚:黑2帆A 白30A B中周科学院十导体研究所供稿
  
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