1) strain lattice
应变晶格
2) lattice strain
晶格应变
1.
The influence on Co lattice strain is not the same for different crystal structures of rare earth oxide.
用X-ray法研究了高能球磨制备Co-La2O3和Co-CeO2粉过程中Co粉的宏观应力与球磨时间的关系,两种不同晶型的稀土氧化物对Co粉的晶格应变影响不尽相同,掺La2O3的粉末球磨到23 h之前,Co粉的晶格应变,即宏观应力随球磨时间的增加而增加,但在23-47 h这段范围,宏观应力几乎不随球磨时间的增加而变化。
2.
On basis of a kinematical theory, the lattice strain distribution as a function of depth were obtained by mul-tiplayer model and trial and error strain function to simulate the rocking curves of X - ray diffraction.
用LSS理论,计算了注入能量为180keV,注入剂量为1×10~(13)～5×10~(15)ion/cm~2的N_2~+/As~+组合离子注人Si的杂质浓度分布,由X射线衍射的运动学理论,利用多层模型和试探应变函数拟合X射线衍射曲线,得到了晶格应变随注入深度的分布,并将二者进行了比较。
3.
TEM observation has been carried out on the lattice strain of as-deposited Ag/Ni multilayered film, and thestrain relaxation of heat-treated sample.
用透射电镜观察原始态Ag/Ni 纳米多层膜元素层间界面处的晶格应变,及经适当热处理后点阵应变发生弛豫的现象。
3) lattice microstrain
晶格微应变
4) strained superlattices
应变超晶格
1.
The electronic band Structures of strained strained GaAs layers grown on GexSi1-x alloys in (001) plane and strained superlattices(Si2)4/(GaAs)4 grown on Si substrates in (001)plane are calculated in tight-binding frame.
采用紧束缚方法计算了生长在ＧｅｘＳｉ１－ｘ合金（００１）面上的应变ＧａＡｓ层以及生长在Ｓｉ（００１）面上的应变超晶格（Ｓｉ２）４／（ＧａＡｓ）４的电子能带结构。
5) strained-layer superlattice
应变超晶格
1.
The GexSi(1-x)/Si strained-layer superlattices avalanche photodetector has been studied and optimum designed.
对GexSi(1-x)／Si应变超晶格雪崩光电探测器进行了分析与优化设计。
2.
The present paper cover the conditions for the growth of InGaAs/GaAs andInGaAs/InP strained-layer superlattices by low pressure metalorganic vapor pliase epitaxy.
本文探讨了ＬＰ－ＭＯＶＰＥ法在ＧａＡｓ和ＩｎＰ衬底上生长２１个周期的ＩｎＧａＡｓ／ＧａＡｓ和２０个周期的ＩｎＧａＡｓ／ＩｎＰ两种应变超晶格的条件，并用Ｘ射线衍射分析了这两种应变超晶格，分析观察到三级卫星峰和六级卫星峰。
3.
The X-ray diffraction (XRD) method was used in the investigation of the structure of (GdTe-ZnTe)/ZnTe /GaAs(100) strained-layer superlattice.
用X射线衍射,并结合X射线动力学衍射理论模型的计算机模拟方法,对(CdTe-ZnTe)/ZnTe/GaAs(100)应变超晶格材料的结构进行了研究,得到了其结构参数和信息。
6) strained-layer superlattice
应变层超晶格
1.
The interface structure of InAs/GaInSb strained-layer superlattice;
InAs/GaInSb应变层超晶格材料的界面结构
2.
The electronic structures of the(GaN)_n/(AlN)_n strained-layer superlattice under free-standing conditions are calculated with the recursion method.
以FreeStanding条件生长的超晶格原胞为计算模型,运用LCAORecursion方法研究了(GaN)n/(AlN)n(001)应变层超晶格的电子结构。
3.
X-ray diffraction curves of Ⅱ-Ⅵ compound strained-layer superlattice grown by metal organic chemical vapor deposition (MOCVD) were measured by using computercontroled X-ray diffractometer.
本文报导了用计算机控制的衍射仪（ＣｕＫα辐射）测量的金属有机化学汽相沉淀（ＭＯＣＶＤ）方法生长的Ⅱ－Ⅵ族应变层超晶格的Ｘ射线衍射曲线，观察到了超晶格结构的多级卫星峰，且卫星峰的强度随角度呈周期性变化。
补充资料：A和B交替生长的超晶格结构
A和B交替生长的超晶格结构
A和B交替生长的超晶格结构层厚：黑2帆A 白30A B中周科学院十导体研究所供稿
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条