1) TFLC
陷阱填充限制电流
2) trap filling
陷阱填充
1.
It is shown that the breakdown of PCSS fabricated from indirect band-gap semiconductors is determined mainly by limited conduction of trap filling, but for PCSS\'s fabricated from materials that exhibit the transferred-electron effect, such as GaAs, breakdown of the PCSS is caused mainly by the negative-resistance-induced electric field enhancement at the anode boundary.
分析了光电导开关在强场下的击穿机理,指出对于间接能带间隙光导材料(如Si)制作的光电导开关,开关的击穿电压主要由陷阱填充限制电导模型决定。
3) trapped charge limited current
陷阱电荷限制电流
1.
According to trapped charge limited current(TCLC)theory,the current conduction regime in OLEDs devices with different thin film thicknesses was investigated systematically by varying the thickness of organic functional layer.
通过改变有机功能层的厚度,采用陷阱电荷限制电流(TCLC)理论对器件电流的数值拟合方法具体地研究了不同薄膜厚度的有机半导体器件内部电流的传导机制,验证了实验结果和理论推导的一致性。
4) Trapped-Charge-Limited current(TCL)
陷阱电荷限制电流(TCL)
5) trap filled limited conduction model
陷阱填充电导模型
6) trapped charge limited(TCL)
陷阱电荷限制(TCL)
补充资料：流动性偏好陷阱或凯恩斯陷阱（Keynes trap）
流动性偏好陷阱或凯恩斯陷阱（Keynes trap）：当利率极低，人们会认为这种利率不大可能再降，或者说有价证券市场价格不大可能上升而只会跌落时，人们不管有多少货币都愿意持在手中，这种情况被称为%26#8220;凯恩斯陷阱%26#8221;或%26#8220;流动偏好陷阱%26#8221;。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条