Si/Ge multilayer films were prepared by ion-beam sputtering.

Si/Ge multilayer films have been prepared by ion-beam sputtering on glass substrates with different periods.

A series of AgNiMnGa nano-granular films with different combinations of component materials were fabricated by using ion-beam sputtering technique.

Polymer fluorocarbon films on polyester were prepared under various discharge conditions by ion-beam sputtering and characterized by using XPS.

The LSCO films which on yttria-stabilized zirconia(YSZ) andaluminates lanthanum (LaAlO_3)were obtained by ion-beam sputtering method.

Influence of Ar~+ energy on the crystalline property of Ge films fabricated by ion beam sputtering;

Samples temperature in ion beam sputtering and its control;

Observation on surface morphology of Ge nano-films grown by ion beam sputtering

Thickness modify of time-power monitoring of ion beam sputter depositing optical thin films;

Design of autocontrol coating process for ion beam sputter system;

According to the characteristics of the device, for IBSD—1000 ion beam sputter system, we utilize the photoelectric switch to control the target rotation system and the planet fixture, and firstly succeeded in realizing the autocontrol of coating process.