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1)  separate absorption,grading,charge,and multiplication avalanche photodiode (SAGCM-APD)
吸收渐变电荷倍增分离型雪崩光电二极管(SAGCM-APD)
2)  SAGM-APD
吸收区倍增区渐变分离-雪崩光电二极管
3)  μAPD
微型雪崩光电二极管
1.
We describe the methods of the integration of microoptic detecting system and microfluidic chip, respectively based on CMOS,VCSEL and μAPD.
介绍了分别基于CMOS、垂直腔面发射激光器(VCSEL)和微型雪崩光电二极管(μAPD)来实现光学检测系统与微流控芯片集成化的方法。
4)  new avalanche photodiode
新型雪崩光电二极管
5)  APD
雪崩光电二极管
1.
Implementation of Compensation for Bias Voltage of Thermo-drift for APDs by Using AC1056;
用AC1056实现对雪崩光电二极管温漂的偏压补偿
2.
In order to implement dynamic bias voltage compensation for the thermal drift of APD gain,high precision A/D and D/A circuits are designed.
为实现对雪崩光电二极管(APD)增益温漂的动态偏压补偿,设计了高精度的ADC和DAC电路系统,对APD可以达到毫伏级的偏压控制精度和0。
3.
This paper discusses a new kind of detecting system for bioluminescence which based on APD.
本文介绍了一种基于雪崩光电二极管的生物发光检测仪器新方案,并与传统的微光测量方案和器件进行了比较。
6)  avalanche photodiode(APD)
雪崩光电二极管
1.
In order to ensure the optimum operating of the avalanche photodiode(APD) in the laser gyro under different temperature conditions,an effect of the temperature on the avalanche gain is analyzed based on the principle of APD multiplication.
为保证激光陀螺中雪崩光电二极管(APD)在温度变化的情况下始终处于最佳工作状态,从APD的倍增机理出发,分析了温度对雪崩增益的影响,建立了虚警率与APD倍增因子的数学模型,并采用监测雪崩噪声平均过阈率的方法,得到器件的实际击穿电压温度系数γ=6。
2.
The edge pre-breakdown of planar-type avalanche photodiode(APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场,导致在结边缘的提前击穿。
3.
According to the requirements and the characteristics of the single-photon detect System,a water-cooling system based on thermoelectricity cooling accompanied by a temperature control instrument was developed to reduce the temperature of the detector avalanche photodiode(APD).
根据单光子探测系统的要求及其特点,采用半导体制冷技术,研制出了用于单光子探测的雪崩光电二极管(APD)的水循环散热制冷腔。
补充资料:二极
1.南极﹑北极。 2.指天子与父母。 3.两种极致。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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