1)  GaAs
砷化嫁
2)  arsenic-free glass melting
无砷化
3)  Arsenide
砷化物
1.
Traditional copper surface roughening treatment involve the use of arsenide-containing electrolyte which is harmful to environment.
对铜箔表面进行粗化处理,传统的粗化工艺中要使用砷化物,不仅操作不便而且危害环境。
2.
The development course of low dimensional semiconductor materials and Ga-based nitride, arsenide semiconductor quantum dots are reviewed.
综述了半导体低维结构以及镓基砷化物、氮化物材料量子点的发展,涉及了外延生长机理、量子点的形貌结构特征,并着重介绍了镓基氮化物材料量子点的制备方法、研究的现状、面临的困难、应用发展现状,并对其未来研究趋势提出了看法。
4)  Gallium arsenide
砷化镓
1.
In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it.
用自制的无机高分子聚合硅酸铁(PFSS),对砷化镓生产中的含砷废水进行了混凝处理。
2.
Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate.
用自制的聚合硅酸铁 (PFSiC)对砷化镓生产中的含砷废水进行混凝处理。
3.
A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers,and the main contamination was gallium arsenide particles in suspension.
砷化镓晶片生产过程中 ,产生大量废水 ,其中主要污染物是悬浮状态的砷化镓微粒。
5)  Arsenic compounds
砷化合物
6)  GaAs
砷化镓
1.
Study on recovering Ga from GaAs scraps by vacuum metallurgy;
真空法处理砷化镓废料回收镓的研究
2.
A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals;
半绝缘砷化镓单晶中AB微缺陷的定量测量方法
3.
Electron Acoustic Microscopic Study of GaAs Epitaxial Layers;
砷化镓半导体外延层的电子声成像
参考词条
补充资料：氧化砷,三氧化二砷
CAS: 　　1327-53-3
分子式: 　As2O3
分子质量: 197.84
熔点: 　　 315℃
中文名称: 氧化亚砷；三氧化二砷；亚砷酐；砒霜；白砒；三氧化砷；亚砷酸酐；氧化砷,三氧化二砷；白砷石
英文名称: Arsenous oxide；Arsenic trioxide；Arsenious acid anhydride；White arsenic；acide arsenieux
说明：补充资料仅用于学习参考，请勿用于其它任何用途。