1) single axis gauge
单轴应变器
2) uniaxial strain gauge
单轴应变计
3) uniaxial stress/strain
单轴应力/应变
4) equivalent uniaxial strain
等效单轴应变
1.
The incremental orthotropic model based on equivalent uniaxial strain and the constitutive relation under cyclic loading in consideration of the effect of cracked section for modeling of concrete were used.
混凝土采用等效单轴应变的增量式正交异性分析模型,考虑裂面效应的反复加载本构关系并做了适当的修改。
2.
Based on the minimization of difference between calculated and test results, the equivalent uniaxial strain corresponding to strength under pressures in two directions is calculated and its regression equations are given.
以应力 应变曲线试验值与计算值的误差达到最小为目标 ,反演出双向受压时相应于强度值的等效单轴应变值 ,并回归得到其计算公式 ;同时对一拉一压、双向受拉及一向开裂、双向开裂等受力状况提出了εic的计算方法 ;经对现有强度理论的分析比较 ,选择了适合平面应变状态的强度准则 ,从而得到了平面应变状态混凝土等效单轴应变本构模型 。
3.
The shortcoming of existing equations for calculating ε ic which is equivalent uniaxial strain corresponding to maximum compressive stress in equivalent uniaxial strain stress relation of concrete are discussed in the paper.
本文讨论了混凝土等效单轴应变本构模型中，相应于最大应力的等效单轴应变εｉｃ计算公式的不足，并根据现有的试验资料，以应力应变曲线的实验值和计算值的误差达到最小为目标，反演得到εｉｃ值，回归出新的εｉｃ计算公式，算例表明新的计算公式能得出更满意的结果。
5) the equivalent uniaxial strain
等效单轴应变
1.
According to the concept of the equivalent uniaxial strain propounded by Darwin and Pecknold, on the base of the 3D axial symmetric orthotropic hypoelastic model of Elwi and Murry, a 3D orthotropic model of hypoelasticity is proposed for concrete.
根据Darwin和Pecknold提出的“等效单轴应变”概念 ,在Elwi和Murry混凝土三维轴对称模型的基础上 ,建立了混凝土三维正交异性次弹性本构模型 。
2.
According to the concept of the equivalent uniaxial strain propounded by Darwin and Pecknold, two amendments are made to the 3-D axial-symmetric anisotropic hypoelastic model of Elwi and Pecknold: 1.
根据Darwin和Pecknold提出的“等效单轴应变”的概念，对Elwi和Murry三维轴对称正交异性次弹性模型进行了两点改进：1。
6) process-induced uniaxial stress
工艺致单轴应变
1.
After summarizing the deficiencies of substrate-induced biaxial stress technology compared with process-induced uniaxial stress and the advantages of process-induced uniaxial stress,the performance improvement of MOS devices is introduced,which use two kinds of process-induced uniaxial stress based on t.
阐述了在MOS器件中使用衬底致双轴应变后器件性能的改善,在总结了与工艺致单轴应变相比衬底致双轴应变的不足以及工艺致单轴应变的优势之后,讲述了基于SiGe源漏和基于双应力线的两种工艺致单轴应变技术及其对MOS器件性能的提高。
补充资料：单轴应力
分子式：
CAS号：
性质： 仅沿某一个轴向作用于材料上而且只有一个分量的应力。即σ1≠0，σ2=σ3=0。这种情况通常在简单拉伸无裂纹的均质材料时出现。如所加应力是张应力，则在受力方向上材料要伸长，垂直于应力方向上材料要减小尺寸。
CAS号：
性质： 仅沿某一个轴向作用于材料上而且只有一个分量的应力。即σ1≠0，σ2=σ3=0。这种情况通常在简单拉伸无裂纹的均质材料时出现。如所加应力是张应力，则在受力方向上材料要伸长，垂直于应力方向上材料要减小尺寸。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条