1) majority emitter
多数载流子发射极
2) majority emitter
多数载流发射极
3) minorityemitter
少数载流子发射极
5) carrier injection lumnescence
载流子注射发光
6) majority-carrier accumulation
多数载流子积累
1.
The majority-carrier accumulation layer is formed in the drift region because of the extended gate when the device is in the on state,and the concentration of drift region is higher than that in conventional SOI-LDMOS with the same breakdown voltage due to from the additional electric field modulat.
由于扩展栅电极的电场调制作用使FSOI-LDMOS在比一般SOI-LDMOS浓度高的漂移区表面,包括折叠硅槽侧面形成多数载流子积累,积累的多数载流子大大降低了漂移区的导通电阻。
补充资料：多数
较大的数量：绝大～ㄧ少数服从～ㄧ～人赞成这个方案。
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参考词条