2) in-situ chemical vapor deposition(in-situ CVD)
原位化学气相沉积
1.
The technique of in-situ chemical vapor deposition(in-situ CVD)was discussed in details.
介绍了目前制备碳纳米管增强金属基复合材料的主要方法,讨论了传统制备工艺所存在的问题,重点介绍了原位化学气相沉积法,通过对其工艺特点、材料性能以及目前的应用现状等几方面的讨论,展示了该制备方法在实际应用中的优势和潜力。
3) Chemical vapor deposition
化学气相沉积法
1.
Silica coating was prepared by atmospheric pressure chemical vapor deposition taking HP40 steel plate as substrate,tetraethyl orthosilicate as silica source,and air as carrier gas and diluent.
以正硅酸乙酯为硅源物质、空气为载气和稀释气,采用常压化学气相沉积法在HP40钢表面制备了SiO2涂层;采用扫描电子显微镜和能量色散能谱表征了SiO2涂层的组织结构和表面形貌;考察了在乙烯裂解的工艺条件下SiO2涂层的结焦抑制能力。
2.
Single-walled carbon nanotubes have been prepared from coal gas by catalytic chemical vapor deposition technique with ferrocene as catalyst, and electrochemistry analysis was carried on supercapacitance using nanotubes as electrodes.
开发以煤气为碳源采用化学气相沉积法制备单壁碳纳米管,并对其作为超级电容器电极的电化学性能进行研究。
3.
Carbon nanotubes (CNTs) is prepared by means of chemical vapor deposition (CVD) method.
利用化学气相沉积法制备碳纳米管(carbonnanotubes,CNTs),分析了气源、催化剂及温度等因素对CNTs形貌和纯度的影响。
4) CVD
化学气相沉积法
1.
Well-aligned open-ended multi-walled carbon nanotube (MWCNT) arrays were prepared via chemical vapor deposition (CVD) method in porous anodic aluminum oxide (AAO) templates without depositing any transition metals as catalyst.
在不加过渡金属做催化剂的前提下,利用化学气相沉积法在二次阳极氧化法制得的多孔氧化铝模板中制备沉积了定取向碳纳米管阵列。
2.
In recent year, the helical carbon fibers are preparation by chemical vapor deposition method(CVD), which commercial acetylene as the carbon source, a nickel as catalyst, a sulfur compound as impurity, reaction temperature at 700~850℃.
近年来螺旋形碳纤维的制备方法主要是化学气相沉积法 (CVD法 )。
3.
In the present work, different shaped carbon nanotubes were produced by the general CVD and the template method at different temperature (600 ℃,700 ℃) with the reaction gas of acetylene.
以乙炔作为反应气 ,用化学气相沉积法 (CVD)和模板法在不同温度 (60 0℃、70 0℃ )下制备了不同形貌的碳纳米管 ,并采用TEM ,HRTEM ,SEM ,XRD ,Raman和充放电实验方法研究其形貌、结构和电化学嵌锂性能 。
5) CVD method
化学气相沉积法
1.
Multiwall carbon nanotubes were prepared by CVD method using Ni-Cu-Al catalyst and methane was the reactant gas for the use of synthesis MWNTs with inner diameter of 25~50 nm.
采用共沉淀-凝胶法制备N i-Cu-A l催化剂,以甲烷为气源利用化学气相沉积法制备内径为25~50 nm的大孔径碳纳米管,研究了催化剂制备条件、反应温度以及反应气流速对碳纳米管和碳产率的影响。
6) chemical vapor deposition method
化学气相沉积法
1.
Multi-walled carbon nanotubes were synthesized by chemical vapor deposition method at the temperature of 750℃,using AB_5 hydrogen storage alloy as a catalyst,methane as a raw material.
在750℃条件下,以AB5储氢合金为催化剂,甲烷为原料气,采用化学气相沉积法制备出多壁碳纳米管。
2.
In this paper,we used the hot filament chemical vapor deposition method to synthesize fine grain diamond films on silicon wafers aiming to exploit diamond's acoustic properties.
金刚石/硅声表面波基片的金刚石层晶粒的细化有利于传播能量损耗的降低,采用热丝化学气相沉积法进行了硅基体上沉积细晶粒金刚石工艺的初步探索。
补充资料:原位
分子式:
CAS号:
性质:源于拉丁语。指在原来的,正常、自然的部位或位置。
CAS号:
性质:源于拉丁语。指在原来的,正常、自然的部位或位置。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条