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1)  SiGe single crystal
锗硅单晶
2)  SiGe bulk
硅锗单晶
1.
The distribution of impurity Ge in SiGe bulk single crystal which was grown by varying speed CZ was measured by using the SEM-EDS methods, and it was found that the Ge concentration varied from a lower value at head to a highter one at the tail of Si crystal which was doped Ge.
利用扫描电镜能谱分析法,对 CZ 法生长的掺锗浓度不同的硅锗单晶中锗浓度进行了测定,结果发现硅中锗的纵向分布是头部浓度较低,尾部锗浓度较高。
3)  single crystal SiGe
单晶锗硅薄膜
4)  poly-SiGe
多晶锗硅
1.
The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM.
采用金属Ni诱导与超高真空化学气相沉积(UHVCVD)相结合的方法,在热氧化硅衬底上生长了多晶锗硅薄膜。
5)  SiGe mixed crystal
锗硅混晶
6)  polycrystalline SiGe
多晶硅锗
1.
Effects of hydrogenation for polycrystalline SiGe (poly-Si1-xGex) thin films were estimated by investigating the dark conductivity and activation energy that derive from the conductivity as a function of the temperature.
优化了热丝法氢处理多晶硅锗薄膜工艺条件。
补充资料:锗单晶
分子式:Ge
CAS号:

性质:周期表IV族元素半导体。共价键结合,金刚石型结构。晶胞由两类不等价原子组成的两个面心立方晶格套构而成,包胞中包含两个不等价原子。为复式晶格。晶格常数0.56575nm。电子纵向和横向有效惯性质量m分别为1.64和0.0819。重空穴和轻空穴的有效惯性质量为0.36和0.04,为间接带隙半导体。室温禁带宽度0.67eV。本征载流子浓度2.4×1019/m3。纯晶体的电子和空穴迁移率趴39m2(V·s)和0.19m2(V·s)。掺入III和V族原子可制成p型或n型材料。采用区熔法提纯晶体。用直接法制备单晶。为制作高频、低噪声半导体器件的优良材料。

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