1) Recrystallization Temperature
再结晶温度
1.
Effect of manufacturing technologies of ingot on the recrystallization temperature of pure tantalum plate;
锭坯生产工艺对纯钽板再结晶温度影响的研究
2.
Influences of rare earth elements on recrystallization temperature of pure copper and BFe10-1-1 alloy
稀土对纯铜和BFe10-1-1合金再结晶温度的影响
3.
The results show that the high temperature mechanical properties of molybdenum wire have been improved markedly by Si、Al、K doping; the recrystallization temperature of molybdenum wire has been increased by 550～600℃ via Si、Al、K doping which generates an interlocked grain structure; the strengthening phase of Si、Al、K doped molybdenum wire is not only the K.
通过透射电镜(TEM)、扫描电镜(SEM)、能谱分析(EDS)对Si、Al、K掺杂烧结钼条和退火钼丝的组织形貌进行了跟踪检测分析;通过DSC和硬度试验检测Si、Al、K掺杂钼丝的再结晶温度;通过热模拟试验对纯钼条和Si、Al、K掺杂钼条的高温综合力学性能进行了对比分析。
2) static recrystallization critical temperature
静态再结晶临界温度
1.
The results show that the static recrystallization critical temperature of tested steels decreases with increasing the strain and increass with increasing the initial austenite grain size.
结果表明:含Nb微合金钢静态再结晶临界温度随应变量增大而降低;随原始奥氏体晶粒尺寸增加而升高。
3) isothermal recrystalization
等温再结晶
4) crystallization temperature
结晶温度
1.
Crystallization Temperature of CaO-SiO_2-Na_2O-CaF_2-Al_2O_3-MgO;
CaO-SiO_2-Na_2O-CaF_2-Al_2O_3-MgO渣系的结晶温度
2.
The effect of crystallization temperatures(100 ℃~140 ℃) on the production of β crystal form in isotactic polypropylene nucleated by pimelic acid,magnesium pimelate and aluminium pimelate respectively had been studied in this paper.
研究了结晶温度(100℃~140℃)对庚二酸、庚二酸镁、庚二酸铝成核等规聚丙烯中β晶型生成的影响。
3.
The effects of R,Na2CO3 content,CaF2 content,Al2O3 content and MgO content on crystallization temperature were determined.
利用差热分析仪,研究连铸保护渣的结晶温度与碱度、Na2CO3含量、CaF2含量、Al2O3含量和MgO含量之间的关系,进而通过建立非线性规划模型,对连铸保护渣的结晶性能进行优化设计和模型预测。
5) narrow crystallization
窄结晶温度
1.
According to the problems on bottom running method and the narrow crystallization range of this alloy that can freeze layer-by-layer,the measure named pouring horizontally and cooling vertically method was put forward.
通过实际生产从工艺角度分析了底注法生产窄结晶温度范围高强度黄铜时夹杂、缩孔缺陷的产生机理。
6) Crystallization peak temperature
结晶峰温度
补充资料：二次再结晶(见再结晶晶粒长大)
二次再结晶(见再结晶晶粒长大)
secondary recrystallization
erCI 201」le」Ing二次再结晶(seeondary reerystallization) 见再结晶晶杠长大。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条