1) RPCVD
减压化学气相沉积
1.
3)/graded Si_(1-x)Ge_x/Si substrate multilayer structure using a reduced pressure chemical vapor deposition (RPCVD) process.
应用减压化学气相沉积技术,在弛豫Si_(0。
2) APCVD
常压化学气相沉积
1.
Preparation of self-cleaning glass coated with TiO_2 on a float glass line by APCVD method
在线常压化学气相沉积方法制备TiO_2自洁薄膜玻璃(英文)
2.
TiN films were coated on glass substrates by atmospheric pressure chemical vapor deposition(APCVD) under different growth conditions,including different substrate temperatures and a gaseous mixture of varying chemical concentrations.
本研究以TiCl4和NH3为反应气体,N2为保护气氛,用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备得到了一系列不同反应温度和原料浓度的TiN薄膜。
3.
N-doped TiO_2 films were grown by atmospheric pressure chemical vapor deposition(APCVD) with TiCl_4 and NH_3 as precursors.
用常压化学气相沉积(APCVD)法,以四氯化钛(TiCl4)、氧气(O2)和氨气(NH3)作为气相反应先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。
3) atmospheric pressure chemical vapor deposition
常压化学气相沉积
1.
Titanium nitride(TiN)films were prepared by the atmospheric pressure chemical vapor deposition process using titanium tetrachloride and ammonia as reactive gases.
以TiCl4和NH3为原料,用常压化学气相沉积法在玻璃基板表面沉积得到了TiN薄膜。
2.
TiO_2/SnO_2:F composite films were deposited by atmospheric pressure chemical vapor deposition with Ti(OC_3H_7)_4 as pre- cursors and SnO_2:F coated glass as substrates.
以Ti(OC_3H_7)_4为先驱体,SnO_2:F镀膜玻璃为基板,采用常压化学气相沉积法制备了TiO_2/SnO_2:F复合薄膜。
4) low pressure chemical vapor deposition
低压化学气相沉积
1.
Boron doped carbon(BCx)thin film was prepared at 1 100 ℃ on carbon fiber substrate by low pressure chemical vapor deposition(LPCVD)from BCl3 and C3H6 as boron and carbon sources respectively.
以 BCl3和 C3H6分别作为低压化学气相沉积制备掺硼碳材料的硼源和碳源,采用热壁化学气相沉积炉,于 1 100 ℃在碳纤维基底上制备了掺硼碳薄膜。
2.
Ge nanowires are synthesized by low pressure chemical vapor deposition (LPCVD) combined with porous alumina template.
采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 。
5) low-pressure chemical vapor deposition
低压化学气相沉积
1.
Synthesize single-wall carbon namotubes by low-pressure chemical vapor deposition method;
低压化学气相沉积法制备单壁碳纳米管
2.
We report a novel method for obtaining high-density Ge-dots/Si multilayered structures by combining low-pressure chemical vapor deposition and metal-induced lateral crystallization.
研究了利用低压化学气相沉积(LPCVD)和金属诱导横向结晶技术制备高密度Ge/Si量子点多层异质结构。
3.
In this paper,we use low-pressure chemical vapor deposition system to synthesize highly vertically aligned CNTs and non-aligned CNTs respectively,and apply them successfully in super-capacitors,field-emission cathode,as well as biological sensors.
本论文利用低压化学气相沉积系统,分别以酞菁铁和乙炔为碳源制备出了高度定向与非定向的多壁碳纳米管,并将其成功应用于超级电容器和场发射阴极以及生物传感器中,在碳纳米管的应用方面作了初步的尝试。
6) APCVD
常压化学气相沉积法
1.
SiO2 functional coatings with TEOS as substrate and air as carrier gas were prepared on steel HP40(25Cr35Ni) by means of atmospheric pressure chemical vapor deposition(APCVD).
以正硅酸乙酯为源物质,空气为载气,采用常压化学气相沉积法在HP40(25Cr35Ni)合金钢基体上制备了SiO2涂层;研究了沉积温度、源物质温度以及气体流量等工艺参数对沉积速率的影响,并通过XRD和SEM分析了涂层的物相组成及表面形貌。
2.
High activity TiO_2 and its composite catalyst were prepared by Atmospheric PressureChemical Vapor Deposition (APCVD) in this paper.
本文采用常压化学气相沉积法(Atmospheric Pressure Chemical Vapor Deposition，APCVD)制备了TiO_2纤维及其掺杂复合催化剂，通过各种现代分析手段对制得的催化剂进行了表征；并进行了光催化活性测定。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条