2) high-K gate dielectrics
高K栅介质
1.
Preparation and characterization of ZrO_2 thin films as novel high-K gate dielectrics;
新型高K栅介质ZrO_2薄膜材料的制备及表征
3) high-k gate dielectric
高k栅介质
1.
Fabrication and properties of the Y-doped Al_2O_3 high-k gate dielectric films;
Y掺杂Al_2O_3高k栅介质薄膜的制备及性能研究
4) high k gate dielectrics
高k栅介质
1.
Some problems of SiO2 gate dielectrics, requirements for high k materials as MOSFET gate dielectrics and the latest development of high k gate dielectrics instead of traditional SiO2 were reviewed.
综述了超薄SiO2栅介质层引起的问题、MOS栅介质层材料的要求、有希望取代传统SiO2的高k栅介质材料的研究进展。
5) high k gate dielectric
高k栅介质
1.
Ultra-high vacuum electron evaporation is used to deposit high k gate dielectric ZrO 2 thin films on SOI substrate with ultrathin top silicon to be applied in SOI MOSFET depleted fully.
采用超高真空电子束蒸发法制备了用于全耗尽SOI场效应晶体管 (MOSFET)中作为高k栅介质的ZrO2 薄膜 。
补充资料：高分子电介质
分子式：
分子量：
CAS号：
性质：见高分子绝缘材料。
分子量：
CAS号：
性质：见高分子绝缘材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条