1) SSMBE
固态源分子束外延
2) SSMBE
固源分子束外延
1.
Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC(0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate.
利用固源分子束外延(SSMBE)生长技术,在1350K的衬底温度下,通过改变Si束流强度,在6H-SiC(0001)面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜,并用反射高能电子衍射(RHEED)与光致发光(PL)谱对生长的薄膜的晶型和发光特性进行表征。
3) solid source molecular beam epitaxy
固源分子束外延
1.
Single crystalline 3C-SiC thin films were grown on Si(111)at different substrate temper- atures by solid source molecular beam epitaxy(SSMBE).
利用固源分子束外延(SSMBE)技术,在Si(111)衬底上异质外延生长3C-SiC单晶薄膜,通过RHEED、XRD、AFM、XPS等实验方法研究了衬底温度对薄膜结构、形貌和化学组分的影响。
4) solid source molecular beam epitaxy (SSMBE)
全固源分子束外延
5) GSMBE
气态源分子束外延
1.
1.3μm vertical-cavity surface-emitting laser structure grown by GSMBE;
气态源分子束外延1.3μm VCSEL器件结构
2.
GSMBE Growth and Characterization of Fundamental and QCL Materials;
气态源分子束外延材料生长及特性和量子级联激光器材料生长研究
3.
Pseudomorphic Si 1-x Ge x layers are grown in GSMBE system using gas source disilane and elemental germanium.
采用气态源分子束外延（ＧＳＭＢＥ）法成功地生长出应变ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金，所使用的源分别是乙硅烷和固态锗。
6) gas source molecular beam epitaxy
气态源分子束外延
1.
The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam epitaxy.
采用气态源分子束外延(GSMBE)技术,通过优化生长条件,获得了高质量的InP、InGaAs以及与InP晶格相匹配的不同禁带宽度的InGaAsP外延材料。
2.
Heavily carbon doped p-type GaAsSb epi-layers with lattice matched to InP substrate are grown by gas source molecular beam epitaxy(GSMBE)using carbon tetrabromide(CBr4)as the carbon source.
以四溴化碳(CBr4)作为碳掺杂源,采用气态源分子束外延(GSMBE)技术生长了InP衬底上晶格匹配的重碳掺杂p型GaAsSb材料。
3.
Si-doped AlxGa1-xAs layers were grown by gas source molecular beam epitaxy with a constant Si cell temperature for all samples.
为比较Al組份对Si掺杂浓度的影响,在用气态源分子束外延生长(GSMBE)掺Si n型AlxGa1-xAs(0≤x≤1)的所有样品时,n型掺杂剂Si炉的温度恒定不变。
补充资料：双生长室固态源分子束外延设备
双生长室固态源分子束外延设备
双生长室固态源分子束外延设备
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条