2) Excimer laser annealing
受激准分子激光退火(激光再结晶)
4) recrystallization activation energy
再结晶激活能
1.
The recrystallization annealing treatments for the as-deformated samples were carried, and the recrystallization activation energy Q was calculated through the formula of Arrhenius equation.
根据Arrhenius公式计算出再结晶激活能Q。
2.
The recrystallization activation energy of the alloy was calculated by using formula of G=Goexp~((-Q/RT)).
研究了变形量对CuCrZr合金再结晶的影响,根据公式G=G0ex(p-Q/RT)计算出再结晶激活能(Q)。
3.
The recrystallization activation energy of Al - 5Mg alloy was calculated, and the effect of deformation quantity on the recrystallization activation energy of the alloy was studied.
根据公式G=G0exp(-Q/RT)计算了Al-5Mg合金再结晶激活能(Q),并探讨了变形量对其再结晶 激活能的影响。
5) excimer-laser-crystallization(ELC)
激光结晶化
6) laser interference crystallization
激光干涉结晶
1.
One-dimensional periodic nanocrystalline silicon arrays made by pulsed laser interference crystallization;
激光干涉结晶法制备一维周期结构的纳米硅阵列
补充资料：二次再结晶(见再结晶晶粒长大)
二次再结晶(见再结晶晶粒长大)
secondary recrystallization
erCI 201」le」Ing二次再结晶(seeondary reerystallization) 见再结晶晶杠长大。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条