1) dielectric quantum well
介电量子阱
2) dielectric quantum well wire
介电量子阱线
3) Quantum well
量子阱
1.
Resonant modes in quantum well structure composed of photonic crystals with different lattice constants;
不同晶格常数光子晶体构成的光量子阱中的共振模
2.
Optical properties and material growth of GaAs(110) quantum wells;
GaAs(110)量子阱材料生长和光学特性
3.
Light emitting model of GaN LED quantum well;
GaN LED量子阱光发射模型
4) photonic quantum well
光量子阱
1.
Modulated photon confined states with graded-index photonic quantum well structure;
渐变折射率光量子阱对束缚态能级的调整
5) Multiple Quantum wells
多量子阱
1.
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;
反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.
GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.
The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.
利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
6) multi-quantum well
多量子阱
1.
Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area.
分析了引起GaN基蓝光LED峰值波长不稳定的原因,它是由多量子阱区内极化效应引起的量子限制斯塔克效应造成的。
2.
To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDⅡ system.
为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量。
3.
Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条