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1)  Si∶H film
硅氢薄膜
1.
The influences of sputtering power and hydrogen partial pressure on the structure of Si∶H films prepared by RF sputtering on single crystal silicon substrate were studied by means of SEM and Raman spectra.
采用SEM和Raman谱对射频磁控溅射法制备的硅氢薄膜结构进行了研究,讨论了在100~400 W范围内溅射功率和氢气分压对硅氢薄膜结构的影响。
2)  hydrogenated silicon film
氢化硅薄膜
1.
Hydrogenated silicon film attracts extensively attention due to its application on many kinds of microelectronic devices, such as infrared imaging system, solar cell and thin film transistor.
氢化硅薄膜由于在红外成像传感器、太阳能电池及薄膜晶体管等微电子器件中有着广泛应用前景而备受关注。
3)  hydrogenated microcrystalline silicon films
氢化微晶硅薄膜
1.
Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD;
HW-MWECR-CVD法制备氢化微晶硅薄膜及其微结构研究
4)  a-Si:H thin film
氢化非晶硅薄膜
1.
Analysis of IR transmission spectra and hypothesis of bond-centered H diffusion in a-Si∶H thin films during light-induced thermal annealing;
氢化非晶硅薄膜的红外光谱分析和桥键氢扩散假设(英文)
5)  a-Si:H film
掺氢非晶硅薄膜
6)  Nano-Si:H Films
氢化纳米硅薄膜
补充资料:甲基三二甲基氢化硅氧基化硅烷
CAS:17082-46-1
沸点:68℃(5 to
中文名称:甲基三二甲基氢化硅氧基化硅烷
英文名称:Methyltris (dimethylhydrogensiloxy) silane
methyltris(dimethylsiloxy)silane
Methyltris(dimethylhydrogensiloxy)silane
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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