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1)  slurry film
抛光液膜
1.
In this model,a Reynolds equation for the slurry flow field was deduced,and the thickness and pressure distribution of slurry film between wafer and polishing pad in chemical and mechanical polishing(CMP) process was simulated by calculation of partial differential equations under different conditions.
结果表明,不同抛光速度和抛光载荷下,抛光液膜厚度、液膜压力和晶片倾斜角呈现不同的分布规律。
2)  polishing film
薄膜抛光
1.
According to the characteristics of grinding polishing film and portable polishing machine made by ourselves, this paper has designed and developed a polishing experiment platform on the basis of MCS51 series.
薄膜抛光技术是超精密磨削领域中一种新兴的磨削技术。
3)  Polishing coat
抛光膜
4)  slurry [英]['slʌri]  [美]['slɝɪ]
抛光液
1.
Study on the performances of polishing slurry in chemical mechanical polishing;
CMP抛光半导体晶片中抛光液的研究
2.
Preparation of ultra-fined Al_2O_3 slurry and its polishing properties on disk CMP;
超细氧化铝抛光液的制备及其抛光特性研究
3.
Tantalum barrier layer of copper interconnection in ULSI and optimization of CMP slurry;
ULSI多层铜布线钽阻挡层及其CMP抛光液的优化
5)  polishing slurry
抛光液
1.
According to the analysis of the structure of polishing pad,polishing machine and polishing slurry,the merits of fixed abrasives (FA)CMP were presented.
经过对传统化学机械抛光技术的研究与分析,指出了目前ULSI制造中使用的传统化学机械抛光技术的缺点,通过对固结磨料化学机械抛光中的抛光垫结构、抛光机原理及抛光液的分析,得出了固结磨料化学机械抛光技术的优点,同时还对硅片固结磨料化学机械抛光的缺陷进行了研究。
2.
Based on the analysis of mechanism of silicon polishing, this paper discusses the influence of polishing slurry on polishing quality.
在分析硅衬底的抛光机理的基础上,主要讨论了抛光液对硅衬底抛光质量的影响,同时对抛光液中各成分的选择作了分析研究,采用不含钠离子的有机碱和高效的无钠螯合剂减少了金属离子的玷污,对活性剂影响吸附的作用机理进行了分析,得到了一种小粒径、高速率和低损伤的无钠抛光液。
3.
Many factors may affect LiNbO3 CMP,such as polishing slurry,polishing pad and polishing technological parameters.
影响LiNbO3化学机械抛光速率的因素很多,如抛光液组成、抛光垫质量、抛光工艺参数等。
6)  polishing solution
抛光液
1.
Through experiment and analysis, different types of suitable polishing solutions to improve productivity and the quality of polished surface were proposed.
通过实验分析,找到适合不同种类光学玻璃的抛光液类型,以有效提高抛光效率,改善抛光表面质量。
2.
Under the same experimental condition(same polishing time,temperature and sapphire concentration),four groups of CdSe wafers were polished using four different polishing solutions.
采用相同温度、刚玉粉、抛光时间和不同方式配制成抛光液,对4组CdSe晶片进行抛光。
补充资料:抛光液
分子式:
CAS号:

性质:硅片去除研磨损伤深度的抛光工艺所用液体材料称抛光液。常见的有二氧化硅抛光液及三氧化铬抛光液。

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