1) DC magnetron co-sputtering
直流磁控共溅射
2) DC reactive magnetron co-sputtering with two targets
双靶直流磁控共溅射
1.
Cu-doped TiO2 thin films were prepared by DC reactive magnetron co-sputtering with two targets.
采用双靶直流磁控共溅射法制备了掺铜TiO2薄膜,通过控制Cu靶的溅射功率改变Cu的掺杂量,研究了掺铜对TiO2薄膜的结构、光吸收及光催化性能的影响。
3) DC magnetron sputtering
直流磁控溅射
1.
Microstructures and Properties of Tantalum Film Grown by DC Magnetron Sputtering;
直流磁控溅射沉积钽膜的结构与性能研究
2.
Effects of thickness on microstructure and properties of Niobium films deposited by DC magnetron sputtering;
膜厚对直流磁控溅射Nb薄膜微结构的影响
3.
Optical and electrical properties of ITO thin films deposited by DC magnetron sputtering at room temperature;
室温直流磁控溅射制备ITO膜及光电性能研究
5) direct current(DC) magnetron sputtering
直流(DC)磁控溅射
6) direct current magnetron sputtering
直流磁控溅射
1.
The photoelectric properties of ITO films were studied with different deposition parameters such as the temperature of substrates, power, pressure, H2O gas partial pressure during direct current magnetron sputtering at low temperature.
论述了直流磁控溅射法低温ITO透明导电薄膜的过程中,衬底温度、溅射功率、溅射压强、水蒸气分压对ITO薄膜的光电性能的影响。
2.
Using ZnO targets with various Al_2O_3 mass fractions of 1%, 2%, 3%,4%, aluminum-doped ZnO films (ZAO) were prepared by direct current magnetron sputtering on glass substrates at different Al_2O_3 dosages and different oxygen partial pressures.
用直流磁控溅射法在玻璃衬底上制备了ZnO∶Al(ZAO)透明导电薄膜试样。
3.
Hydrogen-free diamond-like films and silicon incorporated diamond-like carbon films were deposited by direct current magnetron sputtering with Ar gas, graphite and silicon chips on the single-crystal silicon and optical glass substrates.
本文采用直流磁控溅射方法,以普通光学玻璃和单晶硅为基底,Ar为工作气体和石墨以及硅片为靶材,制备无氢类金刚石薄膜和掺硅类金刚石薄膜。
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条